MBM29LV800TE Fujitsu Microelectronics, Inc., MBM29LV800TE Datasheet - Page 29

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MBM29LV800TE

Manufacturer Part Number
MBM29LV800TE
Description
8m 1m X 8/512 K X 16 Bit
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet

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28
MBM29LV800TE/BE
*1: I
*2: I
*3: Automatic sleep mode enables the low power mode when address remains stable for 150 ns.
*4: (V
Input Leakage Current
Output Leakage Current
A
Current
V
V
V
V
V
Input Low Level
Input High Level
Voltage for Autoselect and Sector
Protection (A
Output Low Voltage Level
Output High Voltage Level
Low V
(Automatic Sleep Mode) *
9
CC
CC
CC
CC
CC
, OE, RESET Inputs Leakage
DC CHARACTERISTICS
CC
CC
Active Current *
Active Current *
Current (Standby)
Current (Standby, Reset)
Current
ID
current listed includes both the DC operating current and the frequency dependent component (at 10 MHz) .
is active while Embedded Algorithm (program or erase) is in progress.
CC
Lock-Out Voltage
V
CC
Parameter
) do not exceed 9 V.
9
, OE, RESET) *
1
2
3
4
Symbol
V
V
V
I
I
I
I
I
V
V
V
I
I
V
CC1
CC2
CC3
CC4
CC5
I
LIT
OH1
OH2
LO
LKO
LI
OL
IH
ID
IL
60/70/90
V
V
V
A
CE
CE
CE
V
RESET
V
RESET
V
RESET
V
I
I
I
f
f
OL
OH
OH
IN
OUT
CC
9
CC
CC
CC
IN
, OE, RESET
10 MHz
5 MHz
4.0 mA, V
V
V
V
V
V
V
V
V
V
2.0 mA, V
100 A
SS
V
CC
IL
IL
IL
CC
CC
CC
CC
Test Conditions
, OE
, OE
, OE
SS
to V
Max, CE
Max,
V
Max,
V
Max, CE
V
to V
0.3 V or V
CC
SS
CC
CC
CC
CC
, V
V
V
V
0.3 V
0.3 V
0.3 V,
CC
, V
IH
IH
IH
CC
12.5 V
,
,
V
CC
CC
V
V
V
SS
CC
CC
V
SS
Min
CC
V
Min
CC
0.3 V
Max
0.3 V,
0.3 V,
Word
Word
Byte
Byte
Max
V
CC
11.5
Min
2.0
2.4
2.3
1.0
1.0
0.5
0.4
Value
V
CC
Max
12.5
0.45
0.6
2.5
35
22
25
12
15
35
1.0
1.0
5
5
5
0.3
Unit
mA
mA
mA
V
V
V
V
V
V
V
A
A
A
A
A
A

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