MBM29LV800TE Fujitsu Microelectronics, Inc., MBM29LV800TE Datasheet - Page 3

• Manufacturer Part Number: MBM29LV800TE
• Description: 8m 1m X 8/512 K X 16 Bit
• Manufacturer: Fujitsu Microelectronics, Inc.

MBM29LV800TE/BE
60/70/90
(Continued)
The standard MBM29LV800TE/BE offer access times 60 ns, 70 ns and 90 ns, allowing operation of high-speed
microprocessors without wait state. To eliminate bus contention, the devices have separate chip enable (CE) ,
write enable (WE) , and output enable (OE) controls.
The MBM29LV800TE/BE are pin and command set compatible with JEDEC standard E
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PROMs. Commands
are written to the command register using standard microprocessor write timings. Register contents serve as
input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally
latch addresses and data needed for the programming and erase operations. Reading data out of the devices
is similar to reading from 5.0 V and 12.0 V Flash or EPROM devices.
The MBM29LV800TE/BE are programmed by executing the program command sequence. This will invoke the
Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths
and verifies proper cell margin. Typically, each sector can be programmed and verified in about 0.5 seconds.
Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase
Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed
before executing the erase operation. During erase, the devices automatically time the erase pulse widths and
verify proper cell margin.
A sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.)
The devices also feature a sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. The MBM29LV800TE/BE are erased when shipped from the
factory.
The devices feature single 3.0 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low V
detector automatically
CC
inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ
,
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by the Toggle Bit feature on DQ
, or the RY/BY output pin. Once the end of a program or erase cycle has been
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completed, the devices internally resets to the read mode.
The MBM29LV800TE/BE also have hardware RESET pins. When this pin is driven low, execution of any
Embedded Program Algorithm or Embedded Erase Algorithm is terminated. The internal state machine is then
reset to the read mode. The RESET pin may be tied to the system reset circuitry. Therefore, if a system reset
occurs during the Embedded Program Algorithm or Embedded Erase Algorithm, the device is automatically
reset to the read mode and will have erroneous data stored in the address locations being programmed or
erased. These locations need re-writing after the Reset. Resetting the device enables the system’s
microprocessor to read the boot-up firmware from the Flash memory.
Fujitsu’s Flash technology combines years of Flash memory manufacturing experience to produce the highest
levels of quality, reliability, and cost effectiveness. The MBM29LV800TE/BE memory electrically erase all bits
within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word
at a time using the EPROM programming mechanism of hot electron injection.
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