MBM29DL32XTE Fujitsu Microelectronics, Inc., MBM29DL32XTE Datasheet - Page 41

• Manufacturer Part Number: MBM29DL32XTE
• Description: Flash Memory 32m 4m X 8/2m X 16 Bit Dual Operation
• Manufacturer: Fujitsu Microelectronics, Inc.

(1) Fast Mode
(2) Fast Programming
(3) Extended Sector Group Protection
(4) CFI (Common Flash Memory Interface)
programmed to sectors that are not erase-suspended. Successively reading from the erase-suspended sector
while the devices are in the erase-suspend-program mode will cause DQ
suspended Program operation is detected by the RY/BY output pin, Data polling of DQ
(DQ
while DQ
To resume the operation of Sector Erase, the Resume command (30h) should be written to the bank being erase
suspended. Any further writes of the Resume command at this point will be ignored. Another Erase Suspend
command can be written after the chip has resumed erasing.
• Extended Command
as extended function. This function enable to protect sector group by forcing V
command sequence. Unlike conventional procedure, it is not necessary to force V
control pins. The only RESET pin requires V
group protection requires V
up command (60h) into the command register. Then, the sector group addresses pins (A
A
to set V
group is typically protected in 250 s. To verify programming of the protection circuitry, the sector group
addresses pins (A
a command (40h). Following the command write, a logical “1” at device output DQ
sector in the read operation. If the output data is logical “0”, please repeat to write extended sector group
protection command (60h) again. To terminate the operation, it is necessary to set RESET pin to V
to the Figures 20 and 29.)
Algorithm is executed by writing program set-up command (A0h) and data write cycles (PA/PD). (Refer to
the Figure 28.)
In addition to normal sector group protection, the MBM29DL32XTE/BE has Extended Sector Group Protection
gation handshake which allows specific vendor-specified software algorithms to be used for entire families
of devices. This allows device-independent, JEDEC ID-independent, and forward-and backward-compatible
software support for the specified flash device families. Refer to CFI specification in detail.
should be set when writing this command. Then the device information can be read from the bank, and an
actual data of memory cell be read from the another bank. Following the command write, a read cycle from
specific address retrieves device information. Please note that output data of upper byte (DQ
in word mode (16 bit) read. Refer to the CFI code table. To terminate operation, it is necessary to write the
read/reset command sequence into the register. (See Table 12.)
required in the standard program command sequence by writing Fast Mode command into the command
register. In this mode, the required bus cycle for programming is two cycles instead of four bus cycles in
standard program command. (Do not write erase command in this mode.) The read operation is also executed
after exiting this mode. To exit this mode, it is necessary to write Fast Mode Reset command into the command
register. The first cycle must contain the bank address. (Refer to the Figure 28.) The V
required even CE = V
During Fast Mode, the programming can be executed with two bus cycles operation. The Embedded Program
The CFI (Common Flash Memory Interface) specification outlines device and host system software interro-
The operation is initiated by writing the query command (98h) into the command register. The bank address
MBM29DL32XTE/BE has Fast Mode function. This mode dispenses with the initial two unclock cycles
6
15
) which is the same as the regular Program operation. Note that DQ
, A
14
6
, A
can be read from any address within bank being erase-suspended.
IL
for the other addresses pins), and write extended sector group protection command (60h). A sector
13
and A
12
20
) and (A
, A
IH
19
, A
during Fast Mode.
18
6
ID
, A
, A
on RESET pin. With this condition, the operation is initiated by writing the set-
1
17
, A
, A
0
) = (0, 1, 0) should be set to the sector group to be protected (recommend
16
, A
15
, A
14
ID
, A
for sector group protection in this mode. The extended sector
13
and A
MBM29DL32XTE/BE
12
) and (A
6
, A
7
must be read from the Program address
1
, A
0
2
) = (0, 1, 0) should be set and write
to toggle. The end of the erase-
ID
on RESET pin and write a
0
will produce for protected
ID
7
and control timing for
or by the Toggle Bit I
20
CC
, A
active current is
8
19
to DQ
, A
-80/90/12
18
, A
IH
15
. (Refer
17
) is “0”
, A
16
,
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