MBM29DL32XTE Fujitsu Microelectronics, Inc., MBM29DL32XTE Datasheet - Page 54

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MBM29DL32XTE

Manufacturer Part Number
MBM29DL32XTE
Description
Flash Memory 32m 4m X 8/2m X 16 Bit Dual Operation
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet
54
MBM29DL32XTE/BE
Note: Test conditions T
Sector Erase Time
Word Programming Time
Byte Programming Time
Chip Programming Time
Program/Erase Cycle
Parameter
ERASE AND PROGRAMMING PERFORMANCE
PIN CAPACITANCE
C
C
C
C
symbol
IN
OUT
IN2
IN3
Parameter
Input Capacitance
Output Capacitance
Control Pin Capacitance
WP/ACC Pin Capacitance
Parameter description
A
= 25°C , f = 1.0 MHz
100,000
Min.
-80/90/12
Limits
Typ.
V
V
V
V
16
1
8
OUT
IN
IN
IN
= 0
= 0
= 0
= 0
Test setup
Max.
360
300
100
10
cycle
Unit
s
s
s
s
Typ.
21.5
8.5
6
8
Excludes programming time
prior to erasure
Excludes system-level
overhead
Excludes system-level
overhead
Comments
Max.
22.5
7.5
12
11
Unit
pF
pF
pF
pF

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