MBM29DL32XTE Fujitsu Microelectronics, Inc., MBM29DL32XTE Datasheet - Page 46

no-image

MBM29DL32XTE

Manufacturer Part Number
MBM29DL32XTE
Description
Flash Memory 32m 4m X 8/2m X 16 Bit Dual Operation
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet
46
MBM29DL32XTE/BE
Toggle Bit II
Note: Successive reads from the erasing or erase-suspend sector will cause DQ
Ready/Busy
Program
Erase
Erase-Suspend Read
(Erase-Suspended Sector)
Erase-Suspend Program
erase cycle has begun; attempts to write subsequent commands to the device will be ignored until the erase
operation is completed as indicated by Data Polling or Toggle Bit I. If DQ
additional sector erase commands. To insure the command has been accepted, the system software should
check the status of DQ
the second status check, the command may not have been accepted.
See Table 14: Hardware Sequence Flags.
• DQ
This toggle bit II, along with DQ
Algorithm or in Erase Suspend.
Successive reads from the erasing sector will cause DQ
devices are in the erase-suspended-read mode, successive reads from the erase-suspended sector will cause
DQ
address of the non-erase suspended sector will indicate a logic “1” at the DQ
DQ
Program operation is in progress. The behavior of these two status bits, along with that of DQ
as follows:
For example, DQ
(DQ
Furthermore, DQ
mode, DQ
To operate toggle bit function properly, CE or OE must be high when bank address is changed.
• RY/BY
The MBM29DL32XTE/BE provide a RY/BY open-drain output pin as a way to indicate to the host system that
the Embedded Algorithms are either in progress or has been completed. If the output is low, the devices are
busy with either a program or erase operation. If the output is high, the devices are ready to accept any read/
write or erase operation. When the RY/BY pin is low, the devices will not accept any additional program or erase
commands. If the MBM29DL32XTE/BE are placed in an Erase Suspend mode, the RY/BY output will be high.
During programming, the RY/BY pin is driven low after the rising edge of the fourth write pulse. During an erase
operation, the RY/BY pin is driven low after the rising edge of the sixth write pulse. The RY/BY pin will indicate
a busy condition during the RESET pulse. Refer to Figures 13 and 14 for a detailed timing diagram. The RY/BY
pin is pulled high in standby mode.
Since this is an open-drain output, RY/BY pins can be tied together in parallel with a pull-up resistor to V
2
6
erase suspend sector address will indicate logic “1” at the DQ
2
to toggle. When the devices are in the erase-suspended-program mode, successive reads from the byte
is different from DQ
toggles while DQ
2
2
toggles if this bit is read from an erasing sector.
Mode
2
2
and DQ
can also be used to determine which sector is being erased. When the device is in the erase
6
3
does not.) See also Table 15 and Figure 12.
prior to and following each subsequent Sector Erase command. If DQ
2
6
in that DQ
can be used together to determine if the erase-suspend-read mode is in progress.
6
, can be used to determine whether the devices are in the Embedded Erase
6
toggles only when the standard program or Erase, or Erase Suspend
Table 15 Toggle Bit Status
-80/90/12
DQ
DQ
DQ
0
1
7
7
7
2
to toggle during the Embedded Erase Algorithm. If the
2
bit.
Toggle
Toggle
Toggle
DQ
1
6
3
is low (“0”), the device will accept
2
2
bit.
to toggle. Reading from non-
Toggle (Note)
1 (Note)
7
Toggle
, is summarized
DQ
3
1
were high on
2
CC
.

Related parts for MBM29DL32XTE