MBM29DL32XTE Fujitsu Microelectronics, Inc., MBM29DL32XTE Datasheet - Page 51

• Manufacturer Part Number: MBM29DL32XTE
• Description: Flash Memory 32m 4m X 8/2m X 16 Bit Dual Operation
• Manufacturer: Fujitsu Microelectronics, Inc.

2. AC Characteristics
Note: Test Conditions:
JEDEC
• Read Only Operations Characteristics
t
t
t
t
t
t
t
AVQV
GLQV
EHQZ
GHQZ
AXQX
ELQV
AVAV
—
—
Parameter
Output Load: 1 TTL gate and 30 pF (MBM29DL32XTE/BE-80)
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V to 3.0 V
Timing measurement reference level
symbols
Standard
Output:1.5 V
Input: 1.5 V
t
t
READY
t
t
t
t
t
ELFL
ELFH
t
t
t
ACC
OH
RC
CE
OE
DF
DF
1 TTL gate and 100 pF (MBM29DL32XTE/BE-90/12)
Read Cycle Time
Address to Output Delay
Chip Enable to Output Delay
Output Enable to Output Delay
Chip Enable to Output High-Z
Output Enable to Output High-Z
Output Hold Time from Addresses,
CE or OE, Whichever Occurs First
RESET Pin Low to Read Mode
CE or BYTE Switching Low or High
Device
Under
Test
Description
C
L
Figure 4 Test Conditions
IN3064
or Equivalent
6.2 k
MBM29DL32XTE/BE
CE = V
OE = V
OE = V
Test setup
3.3 V
—
—
—
—
—
—
—
2.7 k
IL
IL
IL
Max.
Max.
Max.
Max.
Max.
Max.
Max.
Min.
Min.
Diodes = IN3064
or Equivalent
(Note)
80
80
80
80
30
25
25
20
0
5
(Note)
90
90
90
90
35
30
30
20
0
5
(Note)
120
120
120
12
50
30
30
20
0
5
-80/90/12
Unit
ns
ns
ns
ns
ns
ns
ns
ns
s
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