MBM29DL32XTE Fujitsu Microelectronics, Inc., MBM29DL32XTE Datasheet - Page 57

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MBM29DL32XTE

Manufacturer Part Number
MBM29DL32XTE
Description
Flash Memory 32m 4m X 8/2m X 16 Bit Dual Operation
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet
Notes: 1. PA is address of the memory location to be programmed.
Address
CE
OE
WE
Data
2. PD is data to be programmed at byte address.
3. DQ
4. D
5. Figure indicates last two bus cycles out of four bus cycle sequence.
6. These waveforms are for the 16 mode. (The addresses differ from 8 mode.)
Figure 6 AC Waveforms for Alternate WE Controlled Program Operations
OUT
t
7
GHWL
is the output of the complement of the data written to the device.
is the output of the data written to the device.
3rd Bus Cycle
t
CS
555h
t
WC
t
t
DS
A0h
WP
t
t
WPH
DH
t
AS
t
CH
PA
t
PD
AH
Data Polling
t
WHWH1
MBM29DL32XTE/BE
DQ
PA
7
D
OUT
t
t
CE
RC
t
OE
D
OUT
t
OH
-80/90/12
57

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