MT54V512H18A Micron Semiconductor Products, Inc., MT54V512H18A Datasheet - Page 10

• Manufacturer Part Number: MT54V512H18A
• Description: 9Mb QDR SRAM, 2.5V Vdd, Hstl, 2-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 8:
Notes appear following parameter tables
Table 9:
Note 14
Table 10: Thermal Resistance
Note 14; notes appear following parameter tables
512K x 18 2.5V V
MT54V512H18A_16_A.fm - Rev 10/02
DESCRIPTION
DESCRIPTION
Operating Supply Current:
DDR
Standby Supply Current:
NOP
Output Supply
Current: DDR
(For information only)
Address/Control Input Capacitance
Output Capacitance (D,Q)
Clock Capacitance
Junction to Ambient
(Airflow of 1m/s)
Junction to Case (Top)
Junction to Balls (Bottom)
DESCRIPTION
DD
, HSTL, QDRb2 SRAM (Footer Desc variable)
I
Capacitance
DD
Operating Conditions and Maximum Limits
All inputs £ V
time ³
Cycle Time = 0; Input Static
All addresses/data static
t
Soldered on a 4.25 x 1.125 inch, 4-layer,
KHKH =
Device in NOP state;
;
0°C £ T
t
KHKH (MIN); Outputs
CONDITIONS
C
L
T
open
t
= 15pF
A
printed circuit board
KHKH (MIN);
A
IL
£ +70°C; V
= 25ºC; f = 1 MHz
or ³ V
CONDITIONS
CONDITIONS
0.16µm Process
IH
; Cycle
DD
= MAX unless otherwise noted
10
SYMBOL
I
I
DD
I
I
SB
DD
SB
2.5V V
Q
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SYMBOL
C
TYP
TBD
C
585
150
SYMBOL
C
CK
O
I
q
q
q
DD
JA
JC
JB
825
250
75
34
-6
, HSTL, QDRb2 SRAM
TYP
-7.5
700
225
75
27
4
6
5
TYP
25
10
12
-10
550
175
75
20
MAX
UNITS
ºC/W
ºC/W
UNITS
512K x 18
5
7
6
ºC/W
mA
mA
mA
mA
©2002, Micron Technology Inc.
ADVANCE
9, 10, 11
NOTES
NOTES
UNITS
10, 12
pF
pF
pF
10
13
15
16