MT57W1MH18J Micron Semiconductor Products, Inc., MT57W1MH18J Datasheet - Page 16
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MT57W1MH18J
Manufacturer Part Number
MT57W1MH18J
Description
18Mb Ddrii SRAM, 1.8V Vdd, Hstl, 4-Word Burst,
Manufacturer
Micron Semiconductor Products, Inc.
Datasheet
1.MT57W1MH18J.pdf
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Table 14: AC Electrical Characteristics and Recommended Operating Conditions
18Mb: 1.8V V
MT57W1MH18J_H.fm – Rev. H, Pub. 3/03
DESCRIPTION
Control inputs
valid to K rising
edge
Data-in valid to
K, K# rising edge
Hold Times
K rising edge to
address hold
K rising edge to
control inputs
hold
K, K# rising edge
to data-in hold
DD
, HSTL, DDRIIb4 SRAM
(continued)
t
t
t
t
t
DVKH
KHAX
KHDX
SYM
IVKH
KHIX
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
0.40
0.28
0.40
0.40
0.28
-3
0.40
0.30
0.40
0.40
0.30
-3.3
0.50
0.35
0.50
0.50
0.35
-4
16
2 MEG
1.8V V
0.60
0.40
0.60
0.60
0.40
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-5
X
8, 1 MEG
DD
0.70
0.50
0.70
0.70
0.50
, HSTL, DDRIIb4 SRAM
-6
X
0.70
0.50
0.70
0.70
0.50
18, 512K
-7.5
©2003 Micron Technology, Inc.
UNITS NOTES
ns
ns
ns
ns
ns
X
36
16
16
16
16
16
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