MT57W1MH18J Micron Semiconductor Products, Inc., MT57W1MH18J Datasheet - Page 6
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MT57W1MH18J
Manufacturer Part Number
MT57W1MH18J
Description
18Mb Ddrii SRAM, 1.8V Vdd, Hstl, 4-Word Burst,
Manufacturer
Micron Semiconductor Products, Inc.
Datasheet
1.MT57W1MH18J.pdf
(28 pages)
Table 2:
NOTE:
18Mb: 1.8V V
MT57W1MH18J_H.fm – Rev. H, Pub. 3/03
1. Expansion address: 2A for 72Mb
2. NW1# controls writes to DQ4:DQ7
3. Expansion address: 7A for 144Mb
4. Expansion address: 10A for 36Mb
5. Expansion address: 5B for 288Mb
6. NW0# controls writes to DQ0:DQ3
Note that the x8 does not permit random start address on the two least-significant address bits. SA and SA1 = 0 at
the start of each address.
M
A
D
G
H
K
N
B
C
E
P
R
F
J
L
DD
, HSTL, DDRIIb4 SRAM
DLL#
TDO
CQ#
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
1
2 Meg x 8 Ball Layout (Top View)
165-Ball FBGA
V
SS/
V
DQ6
TCK
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
2
REF
SA
1
V
DQ4
DQ5
DQ7
NC
NC
NC
NC
NC
NC
NC
NC
NC
SA
DD
SA
3
Q
V
V
V
V
V
V
V
R/W#
V
V
V
V
SA
DD
DD
DD
DD
DD
DD
DD
SA
SA
4
SS
SS
SS
SS
Q
Q
Q
Q
Q
Q
Q
NW1#
NC
V
V
V
V
V
V
V
V
V
SA
SA
SA
SA
5
DD
DD
DD
DD
DD
SS
SS
SS
SS
5
2
6
2 MEG
V
V
V
V
V
V
V
V
V
NC
K#
SA
C#
6
K
C
SS
SS
SS
SS
SS
SS
SS
SS
SS
1.8V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NW0#
NC
V
V
V
V
V
V
V
V
V
SA
SA
SA
SA
7
DD
DD
DD
DD
DD
SS
SS
SS
SS
X
3
6
8, 1 MEG
DD
V
V
V
V
V
V
V
, HSTL, DDRIIb4 SRAM
LD#
V
V
V
V
DD
DD
DD
DD
DD
DD
DD
SA
SA
SA
8
SS
SS
SS
SS
Q
Q
Q
Q
Q
Q
Q
V
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
SA
DD
SA
X
9
Q
18, 512K
V
DQ1
SS/
V
TMS
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
10
REF
SA
©2003 Micron Technology, Inc.
4
X
DQ3
DQ2
DQ0
TDI
CQ
NC
NC
NC
NC
ZQ
NC
NC
NC
NC
NC
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