VG3617161ET-6 Powerchip, VG3617161ET-6 Datasheet - Page 46
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VG3617161ET-6
Manufacturer Part Number
VG3617161ET-6
Description
1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM
Manufacturer
Powerchip
Datasheet
1.VG3617161ET-6.pdf
(68 pages)
VIS
A11(BS)
DQM
DQ
CLK
CS
CAS
WE
A0~A9
CKE
RAS
A10
Random Row Write (Interleaving Banks) (1 of 2)
Document:1G5-0189
Command
Activate
High
Hi-Z
Bank A
RAa
RAa
T0 T1 T2 T3 T4 T5 T6 T7
t
RCD
t
Command
CK2
Bank A
Write
QAa0
CAa
QAa1 QAa2 QAa3 QAa4 QAa5 QAa6 QAa7
Command
Activate
Bank B
RBa
RBa
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Command
Bank B
Write
t
QBa0 QBa1
DPL
CBa
Rev.2
Command
Precharge
Bank A
QBa2
t
RP
Command
Bank A
Active
QBa3 QBa4 QBa5 QBa6 QBa7
RAb
RAb
CMOS Synchronous Dynamic RAM
Burst Length=8, CAS Latency=2
Command
Bank A
Write
DAb0 DAb1
Command
Precharge
Bank B
t
CAb
DPL
1,048,576 x 16 - Bit
DAb2
Page 46
DAb3
VG3617161ET
DAb4