MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 18

• Manufacturer Part Number: MT29F1G08ABBHC-ET
• Description: NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
• Manufacturer: Micron

Figure 8:
Figure 9:
Figure 10:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
READY/BUSY# Open Drain
t
I
Fall and
OL
vs. Rp
Notes: 1.
Note:
t
Rise
V
I
2.
3.
4. See TC values in Figure 11 on page 19 for approximate Rp value and TC.
GND
3.50mA
3.00mA
2.50mA
2.00mA
1.50mA
1.00mA
0.50mA
0.00mA
V
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
CC
t
t
t
To calculate Rp value, see page 17.
Fall and
Rise is primarily dependent on external pull-up resistor and external capacitive loading.
Fall ≈ 7ns at 1.8V.
-1
0
I
OL
2,000 4,000 6,000 8,000 10,000 12,000
0
t
Device
Rise are calculated at 10 percent and 90 percent points.
t Fall
2
R/B#
Open drain output
4
Rp
TC
Rp
0
18
t Rise
2
I
OL
at 1.95V (MAX)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
4
V
CC
1Gb: x8, x16 NAND Flash Memory
6
1.8
©2006 Micron Technology, Inc. All rights reserved.
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