MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 40
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MT29F1G08ABBHC-ET
Manufacturer Part Number
MT29F1G08ABBHC-ET
Description
NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
Manufacturer
Micron
Datasheet
1.MT29F1G08ABBHC-ET.pdf
(70 pages)
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Figure 28:
Figure 29:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
Flash Array Protected: Inverted Area Bit = 0
Flash Array Protected: Invert Area Bit = 1
Only one range of blocks can be specified in the lower and upper boundary block
address registers. If, after unlocking a range of blocks, the UNLOCK command is again
issued, the new block address range determines which blocks are unlocked. The previ-
ous unlocked block address range is not retained.
The UNLOCK (23h-24h) command is disabled if LOCK is LOW at power-on or if the
device is locked tight (see page 42).
Block 1023
Block 1022
Block 1021
Block 1020
Block 1019
Block 1018
Block 1017
Block 1016
Block 1015
Block 0002
Block 0001
Block 0000
Block 1023
Block 1022
Block 1021
Block 1020
Block 1019
Block 1018
Block 1017
Block 1016
Block 1015
Block 0002
Block 0001
Block 0000
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
3FCh
3F8h
3FCh
3F8h
Upper block boundary
Lower block boundary
Upper block boundary
Lower block boundary
40
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1Gb: x8, x16 NAND Flash Memory
Unprotected
Protected
Unprotected
Protected
Protected
Unprotected
area
area
area
area
area
area
Command Definitions
©2006 Micron Technology, Inc. All rights reserved.