MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 68
![no-image](/images/no-image-200.jpg)
MT29F1G08ABBHC-ET
Manufacturer Part Number
MT29F1G08ABBHC-ET
Description
NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
Manufacturer
Micron
Datasheet
1.MT29F1G08ABBHC-ET.pdf
(70 pages)
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Part Number:
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Figure 63:
Figure 64:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
BLOCK ERASE Operation
RESET Operation
ALE#
WE#
R/B#
WE#
R/B#
I/Ox
CLE
CE#
I/Ox
CLE
CE#
RE#
ERASE SETUP
command
t WC
60h
command
add 1
Row
RESET
Row address
FFh
add 2
Row
t WB
68
command
ERASE
D0h
t WB
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t RST
1Gb: x8, x16 NAND Flash Memory
t BERS
Busy
READ STATUS
command
70h
©2006 Micron Technology, Inc. All rights reserved.
Timing Diagrams
Status
Don‘t Care
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