MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 2
![no-image](/images/no-image-200.jpg)
MT29F1G08ABBHC-ET
Manufacturer Part Number
MT29F1G08ABBHC-ET
Description
NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
Manufacturer
Micron
Datasheet
1.MT29F1G08ABBHC-ET.pdf
(70 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT29F1G08ABBHC-ET
Manufacturer:
MICRON
Quantity:
1 822
Company:
Part Number:
MT29F1G08ABBHC-ET:B
Manufacturer:
MICRON
Quantity:
748
Part Numbering Information
Figure 2:
Valid Part Number Combinations
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__1.fm - Rev. E 1/08 EN
Micron Technology
Product Family
29F = Single-Supply NAND Flash Memory
Density
1G = 1Gb
Device Width
08 = 8 bits
16 = 16 bits
Classification
A
Operating Voltage Range
B = 1.8V (1.65V–1.95V)
Feature Set
A = Feature set A
B = Feature set B
# of die # of CE# # of R/B# I/O
Part Number Chart
1
1
1
Micron NAND Flash devices are available in several configurations and
densities.
After building the part number from the part numbering chart, verify that the part
number is offered and valid by using the Micron Parametric Part Search Web site at
www.micron.com/products/parametric. If the device required is not on this list, contact
the factory.
Common
MT 29F 1G
08
A
B
B HC xx
2
xx
Micron Technology, Inc., reserves the right to change products or specifications without notice.
xx
1Gb: x8, x16 NAND Flash Memory
ES
:B
Part Numbering Information
Die Revision
B = Second generation
Production Status
Blank = Production
ES = Engineering Sample
QS = Qualification Sample
Operating Temperature Range
Blank = Commercial (0°C to +70°C)
ET = Extended (–40° to +85°C)
Block Option
Reserved for Future Use
Flash Performance
Reserved for Future Use
Package Codes
HC = 63-pin VFBGA (lead-free)
©2006 Micron Technology, Inc. All rights reserved.