MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 30

• Manufacturer Part Number: MT29F1G08ABBHC-ET
• Description: NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
• Manufacturer: Micron

PROGRAM Operations
PROGRAM PAGE 80h-10h
SERIAL DATA INPUT 80h
RANDOM DATA INPUT 85h
Figure 19:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
R/B#
I/Ox
80h
PROGRAM and READ STATUS Operation
Address
Micron NAND Flash devices are inherently page-programmed devices. Pages must be
programmed consecutively within a block, from the least significant page address to
most significant page address (that is, 0, 1, 2, …, 63). Random page address program-
ming is prohibited.
Micron NAND Flash devices also support partial-page programming operations. This
means that any single bit can only be programmed one time before an erase is required;
however, the page can be partitioned so that a maximum of eight programming opera-
tions are supported before an erase is required.
PROGRAM PAGE operations require loading the SERIAL DATA INPUT (80h) command
into the command register, followed by the ADDRESS cycles, then the data. Serial data is
loaded on consecutive WE# cycles starting at the given address. The PROGRAM (10h)
command is written after the data input is complete. The internal control logic automat-
ically executes the proper algorithm and controls all the necessary timing to program
and verify the operation. Write verification only detects “1s” that are not successfully
written to “0.”
R/B# goes LOW for the duration of array programming time,
REGISTER (70h) command and the RESET (FFh) command are the only commands valid
during the programming operation. Bit 6 of the status register will reflect the state of
R/B#. When the device reaches ready, read bit 0 of the status register to determine if the
program operation passed or failed (see Figure 19). The command register stays in read
status register mode until another valid command is written to it.
After the initial data set is input, additional data can be written to a new column address
with the RANDOM DATA INPUT (85h) command. The RANDOM DATA INPUT com-
mand can be used any number of times in the same page prior to issuing the PAGE
WRITE (10h) command. See Figure 20 for the proper command sequence.
D
IN
10h
t PROG
30
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1Gb: x8, x16 NAND Flash Memory
70h
Command Definitions
t
Status
PROG. The READ STATUS
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