MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 55

• Manufacturer Part Number: MT29F1G08ABBHC-ET
• Description: NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
• Manufacturer: Micron

Table 23:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
Parameter
Number of partial page programs
Block erase time
Busy time for cache program
Busy time for PROGRAM ERASE on locked block
Busy time for OTP DATA PROGRAM operation if
OTP is protected
Last page program time
Page program time
PROGRAM/ERASE Characteristics
Notes: 1. Eight total to the same page.
2.
3.
4. More than 50 percent of the pages will meet typical
t
t
address load time (last page) - data load time (last page).
CBSY MAX time depends on timing between internal program completion and data in.
LPROG =
t
PROG (last page) +
Symbol
NOP
t
t
t
t
t
t
BERS
CBSY
LBSY
OBSY
LPROG
PROG
55
t
PROG (last - 1 page) - command load time (last page) -
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Typ
250
2
3
–
–
1Gb: x8, x16 NAND Flash Memory
t
PROG at 1.8V and 25°C.
Max
700
700
30
8
3
3
–
Electrical Characteristics
©2006 Micron Technology, Inc. All rights reserved.
Unit
cycle
ms
µs
µs
µs
µs
–
Notes
1
2
3
4