PBSS4160DS Philips Semiconductors, PBSS4160DS Datasheet
PBSS4160DS
Related parts for PBSS4160DS
PBSS4160DS Summary of contents
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... PBSS4160DS NPN/NPN low V Rev. 02 — 27 June 2005 1. Product profile 1.1 General description NPN/NPN low V (SC-74) Surface Mounted Device (SMD) plastic package. PNP complement: PBSS5160DS. 1.2 Features Low collector-emitter saturation voltage V High collector current capability: I High collector current gain (h High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1 ...
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... T amb Rev. 02 — 27 June 2005 PBSS4160DS NPN/NPN low V CEsat Simplified outline Min - - ...
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... O , standard footprint 0.8 (1) P tot (W) 0.6 (2) (3) 0.4 0 standard footprint 2 3 Rev. 02 — 27 June 2005 PBSS4160DS CEsat Min [ [ 006aaa493 80 120 160 amb 2 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. (BISS) transistor Max ...
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... Product data sheet Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point O , standard footprint Rev. 02 — 27 June 2005 PBSS4160DS NPN/NPN low V CEsat Conditions Min Typ [1] in free air - - [ [ ...
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... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values PBSS4160DS_2 Product data sheet Rev. 02 — 27 June 2005 PBSS4160DS NPN/NPN low V CEsat © Koninklijke Philips Electronics N.V. 2005. All rights reserved. (BISS) transistor 006aaa495 ...
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... Boff turn-on time storage time fall time turn-off time transition frequency mA 100 MHz collector capacitance 300 s; 0.02. p Rev. 02 — 27 June 2005 PBSS4160DS CEsat Min Typ = ...
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... T (2) T (3) T Fig 6. Base-emitter voltage as a function of collector 006aaa513 V CEsat ( (mA) C (1) I (2) I (3) I Fig 8. Collector-emitter saturation voltage as a Rev. 02 — 27 June 2005 PBSS4160DS CEsat 1.2 1.0 0.8 (1) (2) 0.6 (3) 0.4 0 amb = 25 C amb ...
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... T Fig 10. Collector-emitter saturation resistance as a 006aaa511 58.5 R CEsat 52.0 45 39.0 32.5 26.0 19.5 13.0 6 (V) CE (1) I (2) I (3) I Fig 12. Collector-emitter saturation resistance as a Rev. 02 — 27 June 2005 PBSS4160DS NPN/NPN low V CEsat (1) 1 (2) ( 100 C ...
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... PBSS4160DS_2 Product data sheet (probe) oscilloscope 450 open 100 ; R C Bon Boff Rev. 02 — 27 June 2005 PBSS4160DS NPN/NPN low V CEsat I (100 %) Bon I Boff off (probe) o ...
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... Product data sheet NPN/NPN low V 3.1 2.7 6 3.0 1.7 2.5 1.3 pin 1 index 1 0.95 1.9 Dimensions in mm Packing methods Package Description SOT457 4 mm pitch tape and reel pitch tape and reel; T2 Rev. 02 — 27 June 2005 PBSS4160DS (BISS) transistor CEsat 1.1 0 0.6 0 0.40 0.26 0.25 0.10 04-11-08 [1] Packing quantity 3000 [2] -115 ...
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... Product data sheet 3.45 1.95 0.95 3.30 2.825 1.60 1.70 3.10 3.20 Dimensions in mm 5.30 1.40 4.30 Dimensions in mm Rev. 02 — 27 June 2005 PBSS4160DS NPN/NPN low V CEsat 0.45 0.55 msc422 0.45 1.45 4.45 MSC423 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. (BISS) transistor solder lands solder resist occupied area solder paste solder lands solder resist ...
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... Objective data sheet - Rev. 02 — 27 June 2005 PBSS4160DS NPN/NPN low V CEsat Doc. number - , and off definition”: added 9397 750 12703 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. (BISS) transistor Supersedes PBSS4160DS_1 added - ...
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... Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Rev. 02 — 27 June 2005 PBSS4160DS (BISS) transistor CEsat © Koninklijke Philips Electronics N.V. 2005. All rights reserved ...
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... No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Published in The Netherlands (BISS) transistor CEsat Date of release: 27 June 2005 Document number: PBSS4160DS_2 ...