PBSS4160DS Philips Semiconductors, PBSS4160DS Datasheet - Page 5

• Manufacturer Part Number: PBSS4160DS
• Description: NPN/NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
PBSS4160DS_2
Product data sheet
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
1
1
3
2
10
3
2
10
FR4 PCB, mounting pad for collector 1 cm
Ceramic PCB, Al
5
5
0.50
0.20
0.10
0.05
0.02
0.01
0.50
0.20
0.10
0.05
0.02
0.01
= 1
= 1
0
0
0.75
0.33
0.75
0.33
10
10
2
4
4
O
3
, standard footprint
10
10
3
3
2
10
10
2
2
Rev. 02 — 27 June 2005
10
10
1
1
60 V, 1 A NPN/NPN low V
1
1
10
10
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
PBSS4160DS
CEsat
10
10
2
2
(BISS) transistor
t
t
p
p
006aaa495
006aaa496
(s)
(s)
10
10
3
3
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