PBSS4160DS Philips Semiconductors, PBSS4160DS Datasheet - Page 6

• Manufacturer Part Number: PBSS4160DS
• Description: NPN/NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
7. Characteristics
PBSS4160DS_2
Product data sheet
Table 7:
T
[1]
Symbol
I
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
CES
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25 C unless otherwise specified.
Parameter
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off current V
DC current gain
collector-emitter saturation
voltage
collector-emitter saturation
resistance
base-emitter saturation
voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
Characteristics
p
300 s;
Rev. 02 — 27 June 2005
0.02.
Conditions
V
V
T
V
V
V
V
I
I
I
I
I
I
V
I
I
I
V
I
f = 100 MHz
V
I
C
C
B
C
C
C
C
Bon
Boff
C
E
j
CB
CB
CE
EB
CE
CE
CE
CE
CE
CB
= 150 C
= 50 mA
= i
= 100 mA; I
= 500 mA;
= 1 A; I
= 1 A; I
= 1 A; I
= 0.5 A;
= 50 mA;
60 V, 1 A NPN/NPN low V
= 25 mA;
= 25 mA
= 5 V; I
= 60 V; I
= 60 V; I
= 60 V; V
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 10 V;
= 10 V;
e
= 0 A; f = 1 MHz
B
B
B
C
= 100 mA
= 100 mA
= 50 mA
C
C
C
C
E
E
= 0 A
= 1 mA
= 500 mA
= 1 A
= 1 A
BE
B
= 0 A
= 0 A;
= 1 mA
= 0 V
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
[1]
[1]
[1]
[1]
[1]
[1]
PBSS4160DS
Min
-
-
-
-
250
200
100
-
-
-
-
-
-
-
-
-
-
-
-
150
-
CEsat
Typ
-
-
-
-
500
420
180
90
115
200
200
0.95
0.82
11
78
90
340
160
500
220
5.5
(BISS) transistor
Max
100
50
100
100
-
-
-
110
140
250
250
1.1
0.9
-
-
-
-
-
-
-
10
Unit
nA
nA
nA
mV
mV
mV
m
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
6 of 14
A