PBSS4160DS Philips Semiconductors, PBSS4160DS Datasheet - Page 2

• Manufacturer Part Number: PBSS4160DS
• Description: NPN/NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
PBSS4160DS_2
Product data sheet
Table 2:
Table 3:
Table 4:
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
4
5
6
Type number
PBSS4160DS
Type number
PBSS4160DS
Symbol Parameter
Per transistor
V
V
V
I
I
I
I
P
C
CM
B
BM
CBO
CEO
EBO
tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
peak base current
total power dissipation
Pinning
Ordering information
Marking codes
Limiting values
Description
emitter TR1
base TR 1
collector TR2
emitter TR2
base TR2
collector TR1
Package
Name
SC-74
Rev. 02 — 27 June 2005
Description
plastic surface mounted package; 6 leads
Marking code
B8
Conditions
open emitter
open base
open collector
single pulse; t
single pulse; t
T
amb
60 V, 1 A NPN/NPN low V
25 C
p
p
Simplified outline
1 ms
1 ms
1
6
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
[1]
[2]
[3]
[1]
[2]
[3]
5
2
PBSS4160DS
Min
-
-
-
-
-
-
-
-
-
-
-
-
4
3
CEsat
Symbol
(BISS) transistor
Max
80
60
5
870
1
1
2
300
1
290
370
450
TR1
6
1
sym020
Version
SOT457
5
2
Unit
V
V
V
mA
A
A
A
mA
A
mW
mW
W
4
3
TR2
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