PBSS4160DS Philips Semiconductors, PBSS4160DS Datasheet - Page 3

• Manufacturer Part Number: PBSS4160DS
• Description: NPN/NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
PBSS4160DS_2
Product data sheet
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol Parameter
Per device
P
T
T
T
Fig 1. Power derating curves
j
amb
stg
tot
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on a ceramic PCB, Al
(1) Ceramic PCB, Al
(2) FR4 PCB, mounting pad for collector 1 cm
(3) FR4 PCB, standard footprint
total power dissipation
junction temperature
ambient temperature
storage temperature
Limiting values
P
(W)
2
tot
O
Rev. 02 — 27 June 2005
0.8
0.6
0.4
0.2
3
0
, standard footprint
…continued
0
(1)
(2)
(3)
Conditions
T
2
40
O
amb
3
, standard footprint.
60 V, 1 A NPN/NPN low V
25 C
2
80
120
T
amb
006aaa493
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
( C)
[1]
[2]
[3]
PBSS4160DS
160
Min
-
-
-
-
65
65
CEsat
(BISS) transistor
Max
420
560
700
150
+150
+150
Unit
mW
mW
W
2
C
C
C
.
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