PBSS4160DS Philips Semiconductors, PBSS4160DS Datasheet - Page 8

• Manufacturer Part Number: PBSS4160DS
• Description: NPN/NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
PBSS4160DS_2
Product data sheet
Fig 9. Base-emitter saturation voltage as a function of
Fig 11. Collector current as a function of
V
(1) T
(2) T
(3) T
BEsat
(V)
(A)
I
C
1.2
1.0
0.8
0.6
0.4
0.2
2.0
1.6
1.2
0.8
0.4
0
10
I
collector current; typical values
T
collector-emitter voltage; typical values
C
0
amb
amb
amb
amb
/I
1
B
= 20
= 55 C
= 25 C
= 100 C
= 25 C
1
1
(1)
(2)
(3)
10
2
I
B
(mA) = 65.0
10
3
2
52.0
39.0
26.0
13.0
6.5
58.5
45.5
32.5
19.5
10
4
006aaa509
006aaa511
3
I
V
C
CE
(mA)
(V)
10
5
Rev. 02 — 27 June 2005
4
Fig 10. Collector-emitter saturation resistance as a
Fig 12. Collector-emitter saturation resistance as a
R
R
(1) T
(2) T
(3) T
(1) I
(2) I
(3) I
CEsat
CEsat
( )
( )
10
10
60 V, 1 A NPN/NPN low V
10
10
10
10
10
10
1
1
3
2
1
10
3
2
1
10
I
function of collector current; typical values
T
function of collector current; typical values
C
C
C
C
amb
amb
amb
amb
/I
/I
/I
/I
1
1
B
B
B
B
= 20
= 100
= 50
= 10
= 100 C
= 25 C
= 55 C
= 25 C
1
1
10
10
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
PBSS4160DS
10
10
2
2
CEsat
(1)
(2)
(3)
10
10
(BISS) transistor
006aaa515
3
006aaa516
(1)
(2)
3
I
I
C
C
(3)
(mA)
(mA)
10
10
4
4
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