PBSS4160DS Philips Semiconductors, PBSS4160DS Datasheet - Page 4

• Manufacturer Part Number: PBSS4160DS
• Description: NPN/NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
6. Thermal characteristics
PBSS4160DS_2
Product data sheet
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
Z
(K/W)
th(j-a)
10
10
10
1
3
2
10
FR4 PCB, standard footprint
5
0.50
0.20
0.10
0.05
0.02
0.01
= 1
0
0.75
0.33
10
4
Table 6:
[1]
[2]
[3]
Symbol
R
R
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on a ceramic PCB, Al
10
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Thermal characteristics
3
10
2
Rev. 02 — 27 June 2005
10
1
2
O
3
, standard footprint.
60 V, 1 A NPN/NPN low V
Conditions
in free air
1
10
[1]
[2]
[3]
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Min
-
-
-
-
PBSS4160DS
CEsat
10
Typ
-
-
-
-
2
(BISS) transistor
t
p
006aaa494
(s)
Max
431
338
278
105
10
3
2
.
Unit
K/W
K/W
K/W
K/W
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