psmn009-100w NXP Semiconductors, psmn009-100w Datasheet - Page 6

• Manufacturer Part Number: psmn009-100w
• Description: Trenchmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
October 1999
N-channel TrenchMOS
Fig.13. Typical turn-on gate-charge characteristics
15
14
13
12
11
10
100
9
8
7
6
5
4
3
2
1
0
90
80
70
60
50
40
30
20
10
I
0
F
0
Gate-source voltage, V
= f(V
0
Tj = 25 C
ID = 100A
Source-Drain Diode Current, IF (A)
VGS = 0 V
Fig.14. Typical reverse diode current.
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
20
SDS
40
); conditions: V
60
Source-Drain Voltage, VSDS (V)
80
Gate charge, Q
GS
V
175 C
100 120 140 160 180 200 220 240
(V)
GS
VDD = 20 V
= f(Q
GS
G
G
= 0 V; parameter T
)
(nC)
Tj = 25 C
1
transistor
1.1 1.2 1.3 1.4 1.5
VDD = 80 V
j
6
avalanche current (I
1000
100
10
Fig.15. Maximum permissible non-repetitive
1
0.001
Maximum Avalanche Current, I
unclamped inductive load
0.01
Tj prior to avalanche = 150 C
Avalanche time, t
AS
) versus avalanche time (t
0.1
AS
(A)
PSMN009-100W
AV
(ms)
Product specification
1
25 C
Rev 1.100
10
AV
);