psmn009-100w NXP Semiconductors, psmn009-100w Datasheet - Page 5

• Manufacturer Part Number: psmn009-100w
• Description: Trenchmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
October 1999
N-channel TrenchMOS
Fig.9. Normalised drain-source on-state resistance.
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
100
130
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
-60
0
Fig.8. Typical transconductance, T
0
Normalised On-state Resistance
0
0
Drain current, ID (A)
Transconductance, gfs (S)
VDS > ID X RDS(ON)
Fig.7. Typical transfer characteristics.
VDS > ID X RDS(ON)
-40
0.5
10
-20
1
20
I
R
D
Junction temperature, Tj (C)
1.5
0
DS(ON)
= f(V
Gate-source voltage, VGS (V)
30
20
2
Drain current, ID (A)
/R
GS
g
40
40
2.5
Tj = 25 C
fs
); parameter T
DS(ON)25 ˚C
= f(I
60
50
3
D
175 C
)
3.5
80
60
= f(T
100 120 140 160 180
4
transistor
70
j
)
4.5
j
j
80
Tj = 25 C
= 25 ˚C .
5
175 C
90
5.5
100
6
5
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
4.5
3.5
2.5
1.5
0.5
100000
4
3
2
1
0
10000
V
-60 -40 -20
1000
Fig.12. Typical capacitances, C
100
C = f(V
GS(TO)
Threshold Voltage, VGS(TO) (V)
0.1
0
Fig.11. Sub-threshold drain current.
Drain current, ID (A)
Capacitances, Ciss, Coss, Crss (pF)
Fig.10. Gate threshold voltage.
= f(T
0.5
DS
); conditions: V
j
); conditions: I
0
1
I
Gate-source voltage, VGS (V)
D
minimum
Junction Temperature, Tj (C)
= f(V
Drain-Source Voltage, VDS (V)
20
1.5
1
40
GS)
2
typical
; T
60
minimum
2.5
j
typical
GS
= 25 ˚C
D
PSMN009-100W
80
maximum
= 1 mA; V
= 0 V; f = 1 MHz
3
Product specification
100 120 140 160 180
10
3.5
iss
, C
maximum
DS
4
oss
, C
= V
Rev 1.100
Ciss
Coss
Crss
4.5
rss
GS
100
.
5