upd44645182af5-fq1-a Renesas Electronics Corporation., upd44645182af5-fq1-a Datasheet

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upd44645182af5-fq1-a

Manufacturer Part Number
upd44645182af5-fq1-a
Description
72m-bit Qdrtm Ii Sram 2-word Burst Operation
Manufacturer
Renesas Electronics Corporation.
Datasheet
Document No. M19958EJ1V0DS00 (1st edition)
Date Published August 2009
Printed in Japan
Description
μ
technology using full CMOS six-transistor memory cell.
and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive edge of
K and K#.
density and wide bit configuration.
Features
• 1.8 ± 0.1 V power supply
• 165-pin PLASTIC BGA (15 x 17)
• HSTL interface
• DLL/PLL circuitry for wide output data valid window and future frequency scaling
• Separate independent read and write data ports with concurrent transactions
• 100% bus utilization DDR READ and WRITE operation
• Two-tick burst for low DDR transaction size
• Two input clocks (K and K#) for precise DDR timing at clock rising edges only
• Two output clocks (C and C#) for precise flight time and clock skew matching-clock
• Internally self-timed write control
• Clock-stop capability. Normal operation is restored in 20
• User programmable impedance output (35 to 70 Ω)
• Fast clock cycle time : 3.3 ns (300 MHz), 4.0 ns (250 MHz), 5.0 ns (200 MHz)
• Simple control logic for easy depth expansion
• JTAG boundary scan
PD44645362A-A is a 2,097,152-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS
The
These products are packaged in 165-pin PLASTIC BGA.
The
These products are suitable for application which require synchronous operation, high speed, low voltage, high
and data delivered together to receiving device
μ
μ
PD44645092A-A is a 8,388,608-word by 9-bit, the
PD44645092A-A,
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
μ
PD44645182A-A and
μ
PD44645092A-A, 44645182A-A, 44645362A-A
2-WORD BURST OPERATION
PRELIMINARY DATA SHEET
72M-BIT QDR
μ
PD44645362A-A integrate unique synchronous peripheral circuitry
μ
μ
PD44645182A-A is a 4,194,304-word by 18-bit and the
s after clock is resumed.
TM
II SRAM
MOS INTEGRATED CIRCUIT
2009

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upd44645182af5-fq1-a Summary of contents

Page 1

PD44645092A-A, 44645182A-A, 44645362A-A Description μ The PD44645092A 8,388,608-word by 9-bit, the μ PD44645362A 2,097,152-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. μ μ ...

Page 2

Ordering Information Part number Cycle Time ns μ PD44645092AF5-E33-FQ1-A 3.3 μ PD44645092AF5-E40-FQ1-A 4.0 μ PD44645092AF5-E50-FQ1-A 5.0 μ PD44645182AF5-E33-FQ1-A 3.3 μ PD44645182AF5-E40-FQ1-A 4.0 μ PD44645182AF5-E50-FQ1-A 5.0 μ PD44645362AF5-E33-FQ1-A 3.3 μ PD44645362AF5-E40-FQ1-A 4.0 μ PD44645362AF5-E50-FQ1-A 5.0 Remark Products with -A at the ...

Page 3

Pin Configurations CQ DLL ...

Page 4

A CQ /144M D10 D NC D11 Q10 Q11 Q12 D12 D13 Q13 V H DLL ...

Page 5

A CQ /288M SS B Q27 Q18 D18 C D27 Q28 D19 D D28 D20 Q19 E Q29 D29 Q20 V F Q30 Q21 D21 V G D30 D22 Q22 V H DLL ...

Page 6

Pin Identification Symbol Type A Input Synchronous Address Inputs: These inputs are registered and must meet the setup and hold times around the rising edge of K for READ cycles and must meet the setup and hold times around the ...

Page 7

Symbol Type CQ, CQ# Output Synchronous Echo Clock Outputs. The rising edges of these outputs are tightly matched to the synchronous data outputs and can be used as a data valid indication. These signals run freely and do not stop ...

Page 8

Block Diagram μ [ PD44645092A-A] 22 ADDRESS R# ADDRESS W# REGISTRY & LOGIC BW0# DATA 18 9 REGISTRY & LOGIC μ [ PD44645182A-A] 21 ADDRESS R# ADDRESS W# REGISTRY & ...

Page 9

PD44645362A-A] 20 ADDRESS R# ADDRESS W# REGISTRY & LOGIC BW0# BW1# BW2# DATA 72 BW3# REGISTRY D35 & LOGIC μ PD44645092A-A, 44645182A-A, 44645362A ...

Page 10

Power-On Sequence in QDR II SRAM QDR II SRAMs must be powered up and initialized in a predefined manner to prevent undefined operations. The following timing charts show the recommended power-on sequence. The following power-up supply voltage application is recommended: ...

Page 11

Truth Table Operation CLK L → H WRITE cycle Load address, input write data on consecutive K and K# rising edge READ cycle L → H Load address, output data on consecutive C and C# rising edge L → H ...

Page 12

Byte Write Operation μ [ PD44645092A-A] Operation K Write → H − Write nothing L → H − Remarks HIGH LOW, → : rising edge. 2. Assumes a WRITE cycle was ...

Page 13

Bus Cycle State Diagram LOAD NEW WRITE ADDRESS AT K# Always W# = LOW WRITE DOUBLE LOW W# = HIGH W# = HIGH WRITE PORT NOP Remarks 1. The address is concatenated with 1 additional internal ...

Page 14

Electrical Specifications Absolute Maximum Ratings Parameter Symbol Supply voltage V Output supply voltage V Input voltage Input / Output voltage Operating ambient temperature Storage temperature Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause ...

Page 15

DC Characteristics ( 70° Parameter Symbol Input leakage current I LI I/O leakage current I LO Operating supply current I V ≤ (Read cycle / Write cycle mA, ...

Page 16

AC Characteristics ( 70° Test Conditions (V = 1.8 ± 0 Input waveform (Rise / Fall time ≤ 0.3 ns) 1.25 V 0.75 V 0.25 V Output waveform V Q ...

Page 17

Read and Write Cycle Parameter Clock Average Clock cycle time (K, K#, C, C#) Clock phase jitter (K, K#, C, C#) Clock HIGH time (K, K#, C, C#) Clock LOW time (K, K#, C, C#) Clock HIGH to Clock# HIGH ...

Page 18

Notes 1. When debugging the system or board, these products can operate at a clock frequency slower than TKHKH (MAX.) without the DLL/PLL circuit being used, if DLL# = LOW. Read latency (RL) is changed to 1.0 clock cycle in ...

Page 19

Read and Write Timing READ WRITE TKHKL TKLKH K# R# TIVKH Address TAVKH TKHAX TAVKH D10 D11 Data in Data out CQ CQ# TKHCH C TKHKL C# Remarks 1. Q00 refers to output from ...

Page 20

Application Example SRAM BWx# C/C# K/ SRAM Controller R Data In Data Out Address R# W# BW# SRAM#1 CQ/CQ SRAM#4 CQ/CQ Source CLK/CLK# Return CLK/CLK ...

Page 21

JTAG Specification These products support a limited set of JTAG functions as in IEEE standard 1149.1. Test Access Port (TAP) Pins Pin name Pin assignments Test Clock Input. All input are captured on the rising edge of TCK and all ...

Page 22

JTAG AC Test Conditions Input waveform (Rise / Fall time ≤ 1 ns) 1 Output waveform 0.9 V Output load 22 μ PD44645092A-A, 44645182A-A, 44645362A-A Test Points Test Points Figure 2. External load at test ...

Page 23

JTAG AC Characteristics ( 70°C) A Parameter Symbol Clock Clock cycle time t THTH Clock frequency f TF Clock HIGH time t THTL Clock LOW time t TLTH Output time TCK LOW to TDO unknown t TLOX ...

Page 24

Scan Register Definition (1) Register name Instruction register The instruction register holds the instructions that are executed by the TAP controller when it is moved into the run-test/idle or the various data register state. The register can be loaded when ...

Page 25

SCAN Exit Order Bit Signal name Bump no. x9 x18 x36 ...

Page 26

JTAG Instructions Instructions EXTEST The EXTEST instruction allows circuitry external to the component package to be tested. Boundary- scan register cells at output pins are used to apply test vectors, while those at input pins capture test results. Typically, the ...

Page 27

Output Pin States of CQ, CQ# and Q Instructions Control-Register Status EXTEST 0 1 IDCODE 0 1 SAMPLE SAMPLE 0 1 BYPASS 0 1 Remark The output pin statuses during each instruction vary according to the Control-Register status ...

Page 28

Boundary Scan Register Status of Output Pins CQ, CQ# and Q Instructions SRAM Status EXTEST READ (Low-Z) NOP (High-Z) IDCODE READ (Low-Z) NOP (High-Z) SAMPLE-Z READ (Low-Z) NOP (High-Z) SAMPLE READ (Low-Z) NOP (High-Z) BYPASS READ (Low-Z) NOP (High-Z) Remark ...

Page 29

TAP Controller State Diagram 1 Test-Logic-Reset Run-Test / Idle Disabling the Test Access Port It is possible to use this device without utilizing the TAP. To disable the TAP Controller without interfering with normal operation of the ...

Page 30

PD44645092A-A, 44645182A-A, 44645362A-A Run-Test/Idle Update-IR Exit1-IR Shift-IR Exit2-IR Pause-IR Exit1-IR Shift-IR Capture-IR Select-IR-Scan Select-DR-Scan Run-Test/Idle Test-Logic-Reset Preliminary Data Sheet M19958EJ1V0DS ...

Page 31

PD44645092A-A, 44645182A-A, 44645362A-A Test-Logic-Reset Select-IR-Scan Select-DR-Scan Run-Test/Idle Update-DR Exit1-DR Shift-DR Exit2-DR Pause-DR Exit1-DR Shift-DR Capture-DR Select-DR-Scan Run-Test/Idle Preliminary Data Sheet M19958EJ1V0DS 31 ...

Page 32

Package Drawing 165-PIN PLASTIC BGA(15x17) E INDEX MARK μ PD44645092A-A, 44645182A-A, 44645362A ...

Page 33

Recommended Soldering Condition Please consult with our sales offices for soldering conditions of these products. Types of Surface Mount Devices μ PD44645092AF5-FQ1-A : 165-pin PLASTIC BGA (15 x 17) μ PD44645182AF5-FQ1-A : 165-pin PLASTIC BGA (15 x 17) μ PD44645362AF5-FQ1-A ...

Page 34

PD44645092A-A, 44645182A-A, 44645362A-A Preliminary Data Sheet M19958EJ1V0DS ...

Page 35

NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the CMOS device stays in the area between V malfunction. Take care ...

Page 36

QDR RAMs and Quad Data Rate RAMs comprise a new series of products developed by Cypress Semiconductor, Renesas, IDT, NEC Electronics, and Samsung. • The information in this document is current as of August, 2009. The information is subject to ...

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