upd44645182af5-fq1-a Renesas Electronics Corporation., upd44645182af5-fq1-a Datasheet - Page 19
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upd44645182af5-fq1-a
Manufacturer Part Number
upd44645182af5-fq1-a
Description
72m-bit Qdrtm Ii Sram 2-word Burst Operation
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPD44645182AF5-FQ1-A.pdf
(36 pages)
Read and Write Timing
Remarks 1. Q00 refers to output from address A0+0.
2. Outputs are disabled (high impedance) 2.5 clock cycles after the last READ (R# = LOW) is input in the
3. In this example, if address A0 = A1, data Q00 = D10, Q01 = D11.
Data out
Address
Data in
Q01 refers to output from the next internal burst address following A0,i.e.,A0+1.
sequences of [READ/WRITE]-[NOP/WRITE], [READ/WRITE]-[NOP/NOP], [READ/NOP]-[NOP/WRITE]
and [READ/NOP] -[NOP/NOP].
Write data is forwarded immediately as read results.
CQ#
CQ
W#
R#
C#
K#
C
K
A0
D10
TAVKH
1
READ
TKHCH
TKHKL
TKHKL
TKHAX TAVKH
A1
D11
TIVKH
2
WRITE
TKLKH
TKLKH TKHK#H
Preliminary Data Sheet M19958EJ1V0DS
A2
D30
TCHCQX
3
TCHQX1
READ
TDVKH TKHDX
TCHCQV
TKHIX
TKHAX
TKHKH
μ
D31
A3
PD44645092A-A, 44645182A-A, 44645362A-A
TCHCQX
4
WRITE
TCHCQV
TK#HKH
TCHQX
Q00
D50
A4
5
READ
TKHK#H TK#HKH
TCHQV
TKHKH
TCHQX
A5
D51
Q01
6
WRITE
TDVKH TKHDX
TCHQV
D60
Q20
TKHCH
7
NOP
TCQHCQ#H
TCQHQV
TCQHQX
D61
Q21
A6
8
WRITE
TCQ#HCQH
Q40
9
NOP
TCHQZ
Q41
10
19