mc68hc908lb8 Freescale Semiconductor, Inc, mc68hc908lb8 Datasheet - Page 229

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mc68hc908lb8

Manufacturer Part Number
mc68hc908lb8
Description
M68hc08 Microcontrollers Microcontroller
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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Freescale Semiconductor
NOTES:
1. f
2. If the page erase time is longer than t
3. If the mass erase time is longer than t
4. t
5. t
6. Typical endurance was evaluated for this product family. For additional information on how Freescale Semiconductor de-
7. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
memory.
memory.
ing HVEN to 0.
t
fines Typical Endurance, please refer to Engineering Bulletin EB619.
to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines Typical Data
Retention, please refer to Engineering Bulletin EB618.
RCV
Read
HV
HV
is defined as the cumulative high voltage programming time to the same row before next erase.
must satisfy this condition: t
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clear-
is defined as the frequency range for which the FLASH memory can be read.
NVS
+ t
MErase
Erase
NVH
MC68HC908LB8 Data Sheet, Rev. 1
+ t
(min), there is no erase disturb, but it reduces the endurance of the FLASH
(min), there is no erase disturb, but it reduces the endurance of the FLASH
PGS
+ (t
PROG
x 32) ≤ t
HV
maximum.
Memory Characteristics
229

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