hyb18tc256160af-3.7 Infineon Technologies Corporation, hyb18tc256160af-3.7 Datasheet - Page 78

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hyb18tc256160af-3.7

Manufacturer Part Number
hyb18tc256160af-3.7
Description
Consumer Dram Ddr2
Manufacturer
Infineon Technologies Corporation
Datasheet

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HYB18TC256160AF-3.7
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Figure 62
Table 34
Voltage (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
1) The driver characteristics evaluation conditions are Minimum 95 °C (
2) The driver characteristics evaluation conditions are Nominal Default 25 °C (
3) The driver characteristics evaluation conditions are Maximum 0 °C (
Data Sheet
Full Strength Default Pull-up Driver Diagram
Full Strength Default Pull–down Driver Characteristics
Pull-down Driver Current [mA]
Min.
0.00
4.30
8.60
12.90
16.90
20.05
22.10
23.27
24.10
24.73
25.23
25.65
26.02
26.35
26.65
26.93
27.20
27.46
1)
Nominal Default low
0.00
5.65
11.30
16.50
21.20
25.00
28.30
30.90
33.00
34.50
35.50
36.10
36.60
36.90
37.10
37.40
37.60
37.70
37.90
78
2)
Nominal Default high
0.00
5.90
11.80
16.80
22.10
27.60
32.40
36.90
40.90
44.60
47.70
50.40
52.60
54.20
55.90
57.10
58.40
59.60
60.90
T
T
CASE
CASE
).
),
T
V
V
CASE
DDQ
DDQ
HYB18TC256160AF–[3S/3.7]
),
= 1.9 V, fast-fast process
= 1.7 V, slow-slow process
V
AC & DC Operating Conditions
DDQ
256-Mbit DDR2 SDRAM
= 1.8 V, typical process
2)
Max.
0.00
7.95
15.90
23.85
31.80
39.75
47.70
55.05
62.95
69.55
75.35
80.35
84.55
87.95
90.70
93.00
95.05
97.05
99.05
101.05
07212005-A7MT-J7NM
3)
Rev. 1.0, 2005-07

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