m52s128324a Elite Semiconductor Memory Technology Inc., m52s128324a Datasheet - Page 35

• Manufacturer Part Number: m52s128324a
• Description: 1m X 32 Bit X 4 Banks Synchronous Dram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

ESMT
Page Write Cycle at Different Bank @ Burst Length = 4
C L O C K
*Note : 1. To interrupt burst write by Row precharge , DQM should be asserted to mask invalid input data.
Elite Semiconductor Memory Technology Inc.
A 1 0 / A P
A D D R
C K E
B A 1
B A 0
C A S
D Q M
W E
R A S
D Q
C S
2. To interrupt burst write by Row precharge , both the write and the precharge banks must be the same.
R o w A c t i v e
( A - Bank )
0
R A a
R A a
1
R o w A c t i v e
( B - B a n k )
2
R B b
R B b
( A - B a n k )
3
W r i t e
D A a 0
C A a
4
D A a 1
5
D A a 2
6
D A a 3
( B - B a n k )
t
7
C D L
W r i t e
D B b 0 D B b 1
C B b
R o w A c t i v e
( C - B a n k )
8
R C c
R C c
9
D B b 2
H I G H
R o w A c t i v e
( D - B a n k )
10
D B b 3
R D d
R D d
( C - B a n k )
11
W r i t e
D C c 0 D C c 1
C C c
12
13
( D - B a n k )
W r i t e
D D d 0 D D d 1
C D d
14
Publication Date: Mar. 2009
Revision: 1.4
15
M52S128324A
C D d 2
t
16
R D L
* N o t e 1
17
( A l l B a n k s )
P r e c h a r g e
18
: D o n ' t c a r e
19
* N o t e 2
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