m52s128324a Elite Semiconductor Memory Technology Inc., m52s128324a Datasheet - Page 41

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m52s128324a

Manufacturer Part Number
m52s128324a
Description
1m X 32 Bit X 4 Banks Synchronous Dram
Manufacturer
Elite Semiconductor Memory Technology Inc.
Datasheet
ESMT
Active/Precharge Power Down Mode @ CAS Latency = 2, Burst Length = 4
A 1 0 / A P
*Note:
Elite Semiconductor Memory Technology Inc.
C L O C K
A D D R
C K E
B A 1
B A 0
D Q M
R A S
C A S
W E
D Q
C S
1. All banks should be in idle state prior to entering precharge power down mode.
2. CKE should be set high at least 1CLK + t
0
P o w e r - D o w n
1
P r e c h a r g e
E n t r y
* N o t e 1
t
S S
2
* N o t e 3
3
4
P o w e r - D o w n
P r e c h a r g e
5
E x i t
R o w A c t i v e
6
R a
R a
* N o t e 2
P o w e r - d o w n
SS
7
A c t i v e
E n t r y
prior to Row active command.
t
S S
8
9
t
S S
P o w e r - d o w n
1 0
A c t i v e
E x i t
1 1
R e a d
C a
1 2
1 3
Publication Date: Mar. 2009
Revision: 1.4
Q a 0
1 4
P r e c h a r g e
M52S128324A
Q a 1
1 5
t
S H Z
Q a 2
1 6
1 7
: D o n ' t c a r e
1 8
41/47
1 9

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