k4s643232c Samsung Semiconductor, Inc., k4s643232c Datasheet - Page 39
k4s643232c
Manufacturer Part Number
k4s643232c
Description
2m X 32 Sdram 512k X 32bit X 4 Banks Synchronous Dram Lvttl
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K4S643232C.pdf
(43 pages)
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DQ
CLOCK
K4S643232C
Burst Read Single bit Write Cycle @Burst Length=2
A
ADDR
DQM
10
CKE
RAS
CAS
BA
BA
/AP
WE
CS
CL=2
CL=3
0
1
*Note :
0
*Note 1
Row Active
(A-Bank)
RAa
RAa
1
1. BRSW modes is enabled by setting A
2. When BRSW write command with auto precharge is executed, keep it in mind that t
the next cycle starts the precharge.
At the BRSW Mode, the burst length at write is fixed to "1" regardless of programmed burst length.
Auto precharge is executed at the burst-end cycle, so in the case of BRSW write command,
2
3
(A-Bank)
Write
DAa0
DAa0
CAa
4
Row Active
(B-Bank)
RBb
RBb
Auto Precharge
5
Read with
(A-Bank)
CAb
6
7
9
"High" at MRS (Mode Register Set).
QAb0 QAb1
8
QAb0 QAb1
9
- 39
HIGH
10
Row Active
(C-Bank)
RCc
RAc
11
Auto Precharge
12
Write with
(B-Bank)
DBc0
DBc0
CBc
13
*Note 2
14
RAS
(C-Bank)
should not be violated.
Read
CCd
15
REV. 1.1 Nov. '99
CMOS SDRAM
16
QCd0 QCd1
17
QCd0 QCd1
18
Precharge
(C-Bank)
: Don't care
19