k9f1208u0a-y Samsung Semiconductor, Inc., k9f1208u0a-y Datasheet - Page 20

• Manufacturer Part Number: k9f1208u0a-y
• Description: 64m X 8 Bit , 32m X 16 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F1208D0A
K9F1208U0A
Pointer Operation of K9F1216X0A(X16)
Samsung NAND Flash has two address pointer commands as a substitute for the most significant column address. ’00h’ command
sets the pointer to ’A’ area(0~255word), and ’50h’ command sets the pointer to ’B’ area(256~263word). With these commands, the
starting column address can be set to any of a whole page(0~263word). ’00h’ or ’50h’ is sustained until another address pointer com-
mand is inputted. To program data starting from ’A’ or ’B’ area, ’00h’ or ’50h’ command must be inputted before ’80h’ command is writ-
ten. A complete read operation prior to ’80h’ command is not necessary.
Table 3. Destination of the pointer
(1) Command input sequence for programming ’A’ area
(2) Command input sequence for programming ’B’ area
Command
00h
50h
’A’,’B’ area can be programmed.
It depends on how many data are inputted.
00h
50h
Only ’B’ area can be programmed.
Pointer position
256 ~ 263 word
The address pointer is set to ’A’ area(0~255), and sustained
The address pointer is set to ’B’ area(256~263), and sustained
0 ~ 255 word
K9F1216D0A
K9F1216U0A
80h
80h
Address / Data input
Address / Data input
spare array(B)
main array(A)
Area
10h
10h
20
Figure 6. Block Diagram of Pointer Operation
00h
’00h’ command can be omitted.
50h
’50h’ command can be omitted.
Pointer select
command
(00h, 50h)
(00h plane)
"A" area
256 Word
"A"
80h
80h
Address / Data input
Address / Data input
Pointer
FLASH MEMORY
(50h plane)
8 Word
"B" area
10h
10h
"B"
Page Register
Internal