k9f1208u0a-y Samsung Semiconductor, Inc., k9f1208u0a-y Datasheet - Page 3

• Manufacturer Part Number: k9f1208u0a-y
• Description: 64m X 8 Bit , 32m X 16 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F1208D0A
K9F1208U0A
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
PRODUCT LIST
FEATURES
GENERAL DESCRIPTION
Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V
Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be
performed in typical 200 s on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in
typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per byte(X8
device) or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command input. The on-
chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and
margining of data. Even the write-intensive systems can take advantage of the K9F12XXX0A s extended reliability of 100K program/
erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F12XXX0A is an optimum solu-
tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
- Memory Cell Array
- Data Register
- Page Program
- Block Erase :
- Page Size
- Random Access
- Serial Page Access : 50ns(Min.)
Organization
Page Read Operation
Voltage Supply
Automatic Program and Erase
- 2.65V device(K9F12XXD0A) : 2.4~2.9V
- 3.3V device(K9F12XXU0A) : 2.7 ~ 3.6 V
- X8 device(K9F1208X0A) : (64M + 2048K)bit x 8 bit
- X16 device(K9F1216X0A) : (32M + 1024K)bit x 16bit
- X16 device(K9F1216X0A) : (256 + 8)bit x16bit
- X8 device(K9F1208X0A) : (16K + 512)Byte
- X16 device(K9F1216X0A) : ( 8K + 256)Word
- X8 device(K9F1208X0A) : (512 + 16)bit x 8bit
- X8 device(K9F1208X0A) : (512 + 16)Byte
- X16 device(K9F1216X0A) : (256 + 8)Word
- X8 device(K9F1208X0A) : (512 + 16)Byte
- X16 device(K9F1216X0A) : (256 + 8)Word
K9F1208D0A-Y,P
K9F1216D0A-Y,P
K9F1208U0A-Y,P
K9F1216U0A-Y,P
K9F1208U0A-V,F
Part Number
: 12 s(Max.)
K9F1216D0A
K9F1216U0A
Vcc Range
2.4 ~ 2.9V
2.7 ~ 3.6V
3
- Program time : 200 s(Typ.)
- Block Erase Time : 2ms(Typ.)
- Program/Erase Lockout During Power Transitions
- Endurance
- Data Retention : 10 Years
- K9F12XXX0A-YCB0/YIB0
- K9F1208U0A-VCB0/VIB0
- K9F12XXX0A-PCB0/PIB0
- K9F1208U0A-FCB0/FIB0
Fast Write Cycle Time
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
Reliable CMOS Floating-Gate Technology
Command Register Operation
Intelligent Copy-Back
Unique ID for Copyright Protection
Package
48 - Pin WSOP I (12X17X0.7mm)
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
* K9F1208U0A-V,F(WSOPI ) is the same device as
K9F1208U0A-Y,P(TSOP1) except package type.
Organization
X16
X16
X8
X8
: 100K Program/Erase Cycles
FLASH MEMORY
PKG Type
WSOP1
TSOP1
TSOP1
TSOP1
TSOP1