k9f1208u0a-y Samsung Semiconductor, Inc., k9f1208u0a-y Datasheet - Page 39

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k9f1208u0a-y

Manufacturer Part Number
k9f1208u0a-y
Description
64m X 8 Bit , 32m X 16 Bit Nand Flash Memory
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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K9F1208D0A
K9F1208U0A
Multi-Plane Copy-Back Program
Multi-Plane Copy-Back Program is an extension of one page Copy-Back Program into four plane operation. Since the device is
equipped with four memory planes, activating the four sets of 528 bytes(x8 device) or 264words(x16 device)page registers enables a
simultaneous Multi-Plane Copy-Back programming of four pages. Partial activation of four planes is also permitted.
First, normal read operation with the "00h"command and address of the source page moves the whole 528 byte data into internal
page buffers. Any further read operation for transferring the addressed pages to the corresponding page register must be executed
with "03h" command instead of "00h" command. Any plane may be selected without regard to "00h" or "03h". Up to four planes may
be addressed. Data moved into the internal page registers are loaded into the destination plane addresses. After the input of com-
mand sequences for reading the source pages, the same procedure as Multi-Plane Page programming except for a replacement
address command with "8Ah" is executed. Since no programming process is involved during data loading at the destination plane
address , R/B remains in Busy state for a short period of time(tDBSY). Read Status command (standard 70h or alternate 71h) may be
issued to find out when the device returns to Ready state by polling the Ready/Busy status bit(I/O 6). After inputting data for the last
plane, actual True Page Program (10h) instead of dummy Page Program command (11h) must be followed to start the programming
process. The operation of R/B and Read Status is the same as that of Page Program. Since maximum four pages are programmed
simultaneously, pass/fail status is available for each page when the program operation completes. No pointer operation is supported
with Multi-Plane Copy-Back Program. Once the Multi-Plane Copy-Back Program is finished, any additional partial page pro-
gramming into the copied pages is prohibited before erase once the Multi-Plane Copy-Back Program is finished.
Figure 19. Four-Plane Copy-Back Program
Destination
Address
Input
Source
Address
Input
8Ah
00h
K9F1216D0A
K9F1216U0A
Block 4092
Block 4088
Block 4088
Block 4092
Plane 0
(1024 Block)
Plane 0
(1024 Block)
Block 0
Block 4
Block 0
Block 4
11h
Max Three Times Repeatable
8Ah
03h
Plane 1
(1024 Block)
Block 4093
Block 4089
Plane 1
(1024 Block)
Block 4089
Block 4089
Block 4093
Block 1
Block 5
Block 1
Block 5
39
11h
8Ah
03h
Max Three Times Repeatable
Block 4094
Block 4094
Block 4090
Block 4090
Plane 2
(1024 Block)
Plane 2
(1024 Block)
Block 2
Block 6
Block 2
Block 6
11h
FLASH MEMORY
8Ah
03h
Plane 3
(1024 Block)
Block 4095
Plane 3
(1024 Block)
Block 4091
Block 4095
Block 4091
Block 3
Block 7
Block 3
Block 7
10h

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