k9f1208u0a-y Samsung Semiconductor, Inc., k9f1208u0a-y Datasheet - Page 21

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k9f1208u0a-y

Manufacturer Part Number
k9f1208u0a-y
Description
64m X 8 Bit , 32m X 16 Bit Nand Flash Memory
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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Figure 8. Read Operation with CE don’t-care.
K9F1208D0A
K9F1208U0A
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528byte 1264word page registers are utilized as separate buffers for this operation and the system design gets more flexible. In addi-
tion, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and
reading would provide significant savings in power consumption.
Figure 7. Program Operation with CE don’t-care.
CLE
CE
WE
ALE
I/O
CE
WE
CLE
ALE
R/B
I/O
CE
WE
RE
X
X
t
CS
00h
80h
K9F1216D0A
K9F1216U0A
Start Add.(4Cycle)
Start Add.(4Cycle)
t
WP
On K9F1208U0A-Y,P,V,F or K9F1208D0A-Y,P
CE must be held
low during tR
t
CH
t
R
Data Input
21
I/O
CE
RE
X
CE don’t-care
t
CE don’t-care
Data Output(sequential)
CEA
t
REA
FLASH MEMORY
Data Input
out
10h

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