m393b1k70bh1 Samsung Semiconductor, Inc., m393b1k70bh1 Datasheet - Page 5

• Manufacturer Part Number: m393b1k70bh1
• Description: Ddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

1.0 DDR3 Registered DIMM Ordering Information
* Note
3.0 Address Configuration
2.0 Key Features
Registered DIMM
- ## : F7(800Mbps 6-6-6) / F8(1066Mbps 7-7-7) / H9(1333Mbps 9-9-9)
• JEDEC standard 1.5V ± 0.075V Power Supply
• V
• 400 MHz f
• 8 independent internal bank
• Programmable CAS Latency: 6,7,8,9,10
• Programmable Additive Latency(Posted CAS) : 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 5(DDR3-800), 6(DDR3-1066), 7(DDR3-1333)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or
• Bi-directional Differential Data Strobe
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower then T
• Asynchronous Reset
write [either On the fly using A12 or MRS]
DDQ
1Gx4(4Gb DDP) based Module
CAS Latency
tRCD(min)
tRAS(min)
tCK(min)
tRP(min)
tRC(min)
512x4(2Gb) based Module
256x8(2Gb) based Module
M393B1K70BH1-CF8/H9
M393B2K70BM1-CF7/F8
M393B5273BH1-CF8/H9
M393B5270BH1-CF8/H9
M393B1K73BH1-CF7/F8
Speed
= 1.5V ± 0.075V
Part Number
CK
Organization
for 800Mb/sec/pin, 533MHz f
DDR3-800
6-6-6
37.5
52.5
2.5
15
15
6
Density
CK
16GB
4GB
4GB
8GB
8GB
Row Address
for 1066Mb/sec/pin, 667MHz f
CASE
A0-A14
A0-A14
A0-A14
85°C, 3.9us at 85°C < T
Organization
512Mx72
512Mx72
1Gx72
1Gx72
2Gx72
5 of 51
DDR3-1066
Column Address
13.125
13.125
50.625
1.875
7-7-7
37.5
A0-A9, A11
A0-A9, A11
7
CASE
CK
A0-A9
256Mx8(K4B2G0846B-HC##)*18
512Mx4(K4B2G0446B-HC##)*18
512Mx4(K4B2G0446B-HC##)*36
512Mx8(K4B2G0846B-HC##)*36
for 1333Mb/sec/pin
1Gx4(K4B4G0446B-MC##)*36
Component Composition
≤ 95°C
Bank Address
BA0-BA2
BA0-BA2
BA0-BA2
DDR3-1333
9-9-9
13.5
13.5
49.5
1.5
36
9
Rev. 1.0 December 2008
DDR3 SDRAM
Number of
Rank
Auto Precharge
2
1
2
4
4
A10/AP
A10/AP
A10/AP
Unit
tCK
ns
ns
ns
ns
ns
Height
30mm
30mm
30mm
30mm
30mm