m395t5163qz4 Samsung Semiconductor, Inc., m395t5163qz4 Datasheet - Page 26
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m395t5163qz4
Manufacturer Part Number
m395t5163qz4
Description
Ddr2 Fully Buffered Dimm
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.M395T5163QZ4.pdf
(42 pages)
Table 10.3 : Power specification (Vdd Max = 1.900V, Vcc Max = 1.575V)
Note :
1. FBDIMM Power was calculated on the basis of DRAM and AMB Values in datasheet.
Table 10.4 : Power specification (Vdd Max = 1.900V, Vcc Max = 1.575V)
Note :
1. FBDIMM Power was calculated on the basis of DRAM and AMB Values in datasheet.
FBDIMM
Icc_Idle_0
Idd_Idle_0
P_idle_0
Icc_Idle_1
Idd_Idle_1
P_idle_1
Icc_active_1
Idd_active_1
P_active_1
Icc_active_2
Idd_active_2
P_active_2
Icc_training
Idd_training
P_training
Icc_Idle_0
Idd_Idle_0
P_idle_0
Icc_Idle_1
Idd_Idle_1
P_idle_1
Icc_active_1
Idd_active_1
P_active_1
Icc_active_2
Idd_active_2
P_active_2
Icc_training
Idd_training
P_training
Symbol
Symbol
14.16
10.06
2600
1980
3400
1980
3900
4221
3700
1980
4000
1980
7.86
9.12
9.59
E66
(PC2-5300)
10.35
1600
1580
2300
1580
2900
3045
2400
1580
2300
1480
5.52
6.62
6.78
6.43
E68
14.16
10.06
2600
1980
3400
1980
3900
4221
3700
1980
4000
1980
7.86
9.12
9.59
E65
(PC2-5300)
12.49
1700
1580
2600
1580
3200
3921
2600
1580
2500
1580
5.68
7.10
7.10
6.94
E68
4GB(M395T5163QZ4)
4GB(M395T5160QZ4)
(PC2-6400)
26 of 42
11.40
1700
1580
2500
1580
3300
3266
2600
1580
2400
1480
5.68
6.94
7.10
6.59
F78
1480
1650
1930
1680
1990
3361
1920
1680
1960
1700
5.47
6.23
9.52
6.22
6.32
E69
10.57
16.26
11.04
11.20
3200
2080
4200
2080
4700
4661
4500
2080
4600
2080
8.99
F76
(PC2-6400)
(PC2-6400)
11.40
1700
1580
2500
1580
3300
3266
2600
1580
2400
1480
5.68
6.94
7.10
6.59
E78
Rev. 1.3 December 2008
10.57
16.26
11.04
11.20
3200
2080
4200
2080
4700
4661
4500
2080
4600
2080
8.99
E76
DDR2 SDRAM
@1.5V
@1.8V
@1.5V
@1.8V
@1.5V
@1.8V
@1.5V
@1.8V
@1.5V
@1.8V
@1.5V
@1.8V
@1.5V
@1.8V
@1.5V
@1.8V
@1.5V
@1.8V
@1.5V
@1.8V
Notes
Notes
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
W
W
W
W
W
W
W
W
W
W