buk9e04 NXP Semiconductors, buk9e04 Datasheet - Page 8

• Manufacturer Part Number: buk9e04
• Description: Buk9e04-30b Trenchmos Tm Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 12108
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
V GS(th)
I
T
(V)
D
2.5
2.0
1.5
1.0
0.5
0.0
180
120
j
g fs
(S)
= 1 mA; V
60
= 25 C; V
0
junction temperature.
drain current; typical values.
-60
0
DS
DS
= V
= 25 V
0
GS
20
60
max
min
typ
40
120
I D (A)
T j ( C)
03no67
03ng52
Rev. 01 — 14 November 2003
180
60
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
I D
(A)
T
V
10 -4
10 -5
10 -6
8000
6000
4000
2000
10 -1
10 -2
10
C
(pF)
j
GS
= 25 C; V
-3
0
gate-source voltage.
as a function of drain-source voltage; typical
values.
10 -1
= 0 V; f = 1 MHz
0
0.5
DS
= V
min
GS
1
1
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
BUK9E04-30B
C iss
C oss
C rss
1.5
typ
10
2
max
V DS (V)
2.5
V GS (V)
03no72
03ng53
10 2
3
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