buk9e04 NXP Semiconductors, buk9e04 Datasheet - Page 5

• Manufacturer Part Number: buk9e04
• Description: Buk9e04-30b Trenchmos Tm Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
6. Characteristics
Table 5:
T
9397 750 12108
Product data
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
DSS
GSS
d(on)
r
d(off)
f
j
d
s
(BR)DSS
GS(th)
DSon
iss
oss
rss
g(tot)
gs
gd
= 25 C unless otherwise specified.
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
total gate charge
gate-to-source charge
gate-to-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
Conditions
I
Figure 9
V
V
V
Figure 7
V
V
V
I
V
f = 1 MHz;
V
V
from drain lead 6 mm from
package to center of die
from upper edge of drain
mounting base to center of
die
from source lead to source
bond pad
D
D
D
DS
GS
GS
GS
GS
GS
GS
DD
GS
T
T
T
T
T
T
T
T
T
= 0.25 mA; V
= 1 mA; V
= 25 A;
j
j
j
j
j
j
j
j
j
= 30 V; V
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 15 V; V
= 5 V; I
= 25 C
= 175 C
= 4.5 V; I
= 10 V; I
= 5 V; V
= 0 V; V
= 30 V; R
= 5 V; R
Rev. 01 — 14 November 2003
and
Figure 14
Figure 12
D
DS
DD
DS
G
D
8
= 25 A;
D
GS
L
= 10
= 25 A
DS
= V
= 25 A
GS
= 24 V;
= 25 V;
= 1.2 ;
= 0 V
= 0 V
= 0 V
GS
;
Min
30
27
1.1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
BUK9E04-30B
Typ
-
-
1.5
-
-
0.02
-
2
3.4
-
-
2.7
56
10
22
4895
1257
527
30
76
236
143
4.5
2.5
7.5
Max
-
-
2
-
2.3
1
500
100
4
7.6
4.4
3
-
-
-
6526
1508
721
-
-
-
-
-
-
-
Unit
V
V
V
V
V
nA
m
m
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
5 of 13
A
A