buk9e04 NXP Semiconductors, buk9e04 Datasheet - Page 2

• Manufacturer Part Number: buk9e04
• Description: Buk9e04-30b Trenchmos Tm Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
3. Ordering information
Table 2:
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
9397 750 12108
Product data
Type number
BUK9E04-30B
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
DR
DRM
DS
DGR
GS
tot
stg
j
DS(AL)S
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
reverse drain current (DC)
reverse drain current
non-repetitive drain-source avalanche
energy
Ordering information
Limiting values
Package
Name
I
2
-PAK
Description
Plastic single-ended package (Philips version of I
TO-220AB
Rev. 01 — 14 November 2003
Conditions
T
Figure 2
T
T
Figure 3
T
T
T
unclamped inductive load; I
V
starting T
R
mb
mb
mb
mb
mb
mb
DS
GS
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C; pulsed; t
= 20 k
30 V; V
and
mb
= 25 C
3
Figure 1
GS
GS
GS
= 5 V; R
= 5 V;
= 5 V;
p
p
GS
10 s;
10 s
Figure 2
D
= 50 ;
= 75 A;
2
-PAK); low-profile 3 lead
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
BUK9E04-30B
[1]
[2]
[2]
[1]
[2]
Min
-
-
-
-
-
-
-
-
-
-
-
-
55
55
Max
30
30
183
75
75
732
254
+175
+175
183
75
732
1.3
15
Version
SOT226
Unit
V
V
V
A
A
A
A
W
A
A
A
J
C
C
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