buk9e04 NXP Semiconductors, buk9e04 Datasheet - Page 7

• Manufacturer Part Number: buk9e04
• Description: Buk9e04-30b Trenchmos Tm Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 12108
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
T
T
(m )
I D
350
280
210
140
j
j
(A)
= 25 C; t
= 25 C
70
10
0
8
6
4
2
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
10
5
4
Label is V GS (V)
p
3.8
= 300 s
70
2
140
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
2
4
3
3.2
210
6
Label is V GS (V)
3.4
280
8
3.6
V DS (V)
I D (A)
03no71
03no70
3.8
10
4
5
Rev. 01 — 14 November 2003
350
10
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
R DSon
T
(m )
a
j
a
1.5
0.5
= 25 C; I
=
5
4
3
2
2
1
0
of gate-source voltage; typical values.
factor as a function of junction temperature.
-60
---------------------------- -
R
3
DSon 25 C
R
DSon
D
= 25 A
0
7
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
BUK9E04-30B
60
11
120
V GS (V)
T j ( C)
03aa27
03no69
180
15
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