buk9e04 NXP Semiconductors, buk9e04 Datasheet - Page 3

• Manufacturer Part Number: buk9e04
• Description: Buk9e04-30b Trenchmos Tm Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 12108
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
P der
(%)
T
I D
10 3
10 2
120
(A)
mb
10
80
40
P
1
0
function of mounting base temperature.
der
10 -1
= 25 C; I
0
=
---------------------- -
P
tot 25 C
P
DM
tot
50
single pulse.
100%
Limit R DSon = V DS / I D
100
Capped at 75 A due to package
150
T mb ( C)
1
03na19
Rev. 01 — 14 November 2003
200
Fig 2. Continuous drain current as a function of
V
200
I D
150
100
GS
(A)
50
0
mounting base temperature.
DC
0
5 V
Capped at 75 A due to package
10
50
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
BUK9E04-30B
100
V DS (V)
100 ms
t p = 10 s
100 s
1 ms
10 ms
150
T mb ( C)
03no73
03no74
10 2
200
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