STN4412S8RG STANSON [Stanson Technology], STN4412S8RG Datasheet - Page 3

• Manufacturer Part Number: STN4412S8RG
• Description: N Channel Enhancement Mode MOSFET
• Manufacturer: STANSON [Stanson Technology]

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Static
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
Gate Leakage Current
Zero Gate Voltage
Drain Current
On-State Drain
Current
Drain-source On-
Resistance
Forward
Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse
TransferCapacitance
Turn-On Time
Turn-Off Time
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
V
R
V
I
(BR)DSS
t
t
I
I
DS(on)
GS(th)
V
Q
D(on)
Q
d(on)
d(off)
gfs
Q
GSS
DSS
C
C
C
tr
tf
SD
gd
gs
g
oss
iss
rss
I
V
V
V
V
V
D
V
V
V
V
V
V
V
DS
=1A,V
DS
I
GS
DS
DS
GS
DS
DS
GS
DD
S
DS
DS
=V
=2.3A,V
=15V,I
=0V,ID=250uA
=0V,V
=15V,V
=6.0V,I
≧5V,V
=10V,I
=15V,R
=24V,V
=24V,V
==15V,VGS=0V
Condition
T
R
GS
F=1MHz
J
I
=85℃
G
D
GEN
,ID=250uA
N Channel Enhancement Mode MOSFET
=6Ω
≡2A
GS
D
=-10V
GS
D
GS
D
GS
=6.2AV
L
=±20V
GS
GS
=6.8A
=5.6A
=15Ω
=10V
=10V
=0V
=0V
=0V
Min
1.0
30
25
STN4412
Copyright © 2007, Stanson Corp.
Typ
0.8
30
22
13
450
240
2.5
16
38
15
10
40
3
6
STN4412 2007. V1
±100
Max
3.0
1.2
28
36
1
5
24
20
12
20
80
6.8A
Unit
mΩ
nA
uA
nC
nS
V
V
V
A
S
pF