CHA2092B99F/00 UMS [United Monolithic Semiconductors], CHA2092B99F/00 Datasheet - Page 2

• Manufacturer Part Number: CHA2092B99F/00
• Description: 18-32GHz Low Noise Amplifier
• Manufacturer: UMS [United Monolithic Semiconductors]

Electrical Characteristics
Tamb = +25°C, Vds = 3.5V; Ids=60mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
VSWRout Output VSWR (1)
(1)These values are representative of on-wafer measurements that are made without bonding
(2) 60 mA is the typical bias current used for on wafer measurements, with Vgs1 and Vgs2&3
(3) Ids=90mA
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Symbol
Symbol
VSWRin
CHA2092b
wires at the RF ports.
connected together. For optimum noise figure, the bias current could be reduced down to
50 mA, adjusting the Vgs1 voltage.
Ref. : DSCHA20921233 21-August-01
P1dB
Tstg
Fop
Pin
Gsb
NF
Vd
Vd
Vg
Ta
G
Is
Id
Id
G
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Operating frequency range (1)
Small signal gain (1)
Small signal gain flatness (1)
Gain flatness over 40MHz
Reverse isolation (1)
Output power at 1dB gain compression (3)
Input VSWR (1)
Noise figure (2)
DC Voltage
Bias current (2)
Drain bias voltage
Drain bias current
Gate bias voltage
Maximum peak input power overdrive (2)
Operating temperature range
Storage temperature range
Tel.: [phone] - Fax : [phone]
Parameter
18-20GHz
28-32GHz
Parameter
20-28GHz
Vd
Vgs1,Vgs2&3
2/6
18-32GHz Low Noise Amplifier
Min
Specifications subject to change without notice
20
18
25
8
2.5:1
2.5:1
Typ
-0.5
2.5
3.5
22
30
10
60
1.5
-2.0 to +0.4
-55 to +155
-40 to +85
Values
120
+15
5.0
Max
3.0:1
3.0:1
100
0.5
3.5
4.5
28
Min
18
17
25
8
2.5:1
2.5:1
Typ
-0.5
2.5
2.5
2.5
3.5
22
30
10
60
2.5
Unit
dBm
mA
°C
°C
V
V
3.5:1
3.5:1
Max
100
0.5
3.5
3.5
4.5
32
4
dBpp
Unit
dBm
GHz
mA
dB
dB
dB
dB
V
V