CHA2292_07 UMS [United Monolithic Semiconductors], CHA2292_07 Datasheet - Page 2

• Manufacturer Part Number: CHA2292_07
• Description: 16-24GHz Low Noise, Variable Gain Amplifier
• Manufacturer: UMS [United Monolithic Semiconductors]

17-24GHz LNA VGA
Electrical Characteristics for Broadband Operation
Tamb = +25° C, V5=Vd2,3,4=5V
Absolute Maximum Ratings
Tamb. = 25° C (1)
VSWRout Output VSWR (1)
(1) These values are representative of on-wafer measurements that are made without bonding
(2) For optimum noise figure, the bias current Id1 should be adjusted to 35mA with Vg1 voltage.
(3) With Id1=35mA, adjust Vg2,3,4 voltage for a total drain current around 160mA.
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Symbol
VSWRin
Symbol
wires at RF ports.
Ref. : DSCHA22927150 - 20 May 07
P1dB
Gctrl
Tstg
Fop
Pin
NF
Id1
Vd
Vd
Vg
Vc
Ta
G
Is
Id
Id
G
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Operating frequency range
Small signal gain (1)
Small signal gain flatness (1)
Reverse isolation (1)
Noise figure with Vc=1.2V
Gain control range versus Vc
Output power at 1dB compression with Vc=1.2V
Input VSWR (1)
DC voltage
Bias current (2) with Vc=1.2V
Bias current total (3) with Vc=1.2V
Tel.: [phone] - Fax : [phone]
Drain bias voltage
Control bias voltage
Drain bias current
Gate bias voltage
Maximum peak input power overdrive (2)
Operating temperature range
Storage temperature range
Parameter
Parameter
V5= Vd2,3,4
Vc
2/7
Specifications subject to change without notice
Min
-1.5
16
24
15
-2.0 to +0.4
-55 to +155
-40 to +85
[-0.7, +1.2]
Values
+15
250
5.5
1.5
2.5:1
2.0:1
Typ
160
2.8
26
±1
50
20
11
35
5
CHA2292
3.5:1
Max
+1.3
3.5
3:1
24
dBm
Unit
Unit
mA
dBm
GHz
° C
° C
mA
mA
V
V
V
dB
dB
dB
dB
dB
V
V