CHA2293-99F/00 UMS [United Monolithic Semiconductors], CHA2293-99F/00 Datasheet - Page 2

• Manufacturer Part Number: CHA2293-99F/00
• Description: 24.5-29.5GHz Low Noise, Variable Gain Amplifier
• Manufacturer: UMS [United Monolithic Semiconductors]

24.5-29.5GHz LNA VGA
Electrical Characteristics for Broadband Operation
Tamb = +25°C, V5=Vd= 5V
Absolute Maximum Ratings
Tamb. = 25°C (1)
VSWRout Output VSWR (1)
(1) These values are representative of on-wafer measurements that are made without bonding
(2) For optimum noise figure, the bias current Id1 should be adjust to 35mA with Vg1 voltage.
(3) With Id1=35mA, adjust Vg voltage for a total drain current around 160mA.
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Symbol
VSWRin
Symbol
wires at RF ports.
Ref. : DSCHA22931201 -20-July-01
P1dB
Gctrl
Tstg
Fop
Pin
NF
Id1
Vd
Vd
Vg
Vc
Ta
G
Is
Id
Id
G
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Operating frequency range
Small signal gain (1)
Small signal gain flatness (1)
Reverse isolation (1)
Noise figure with Vc=1.2V
Gain control range versus Vc
Output power at 1dB compression with Vc=1.2V
Input VSWR (1)
DC voltage
Bias current (2) with Vc=1.2V
Bias current total (3) with Vc=1.2V
Tel.: [phone] - Fax : [phone]
Drain bias voltage
Control bias voltage
Operating temperature range
Storage temperature range
Drain bias current
Gate bias voltage
Maximum peak input power overdrive (2)
Parameter
Parameter
V5= Vd
Vc
2/7
Specifications subject to change without notice
Min
24.5
-1.5
-2.0 to +0.4
-55 to +155
-40 to +85
[-0.7, 1.2]
Values
250
+15
5.5
1.5
Typ
±1.5
160
24
50
15
12
35
3
5
CHA2293
Max
4.0:1
2.0:1
29.5
3.5
1.3
Unit
dBm
GHz
Unit
dBm
mA
mA
mA
dB
dB
dB
dB
dB
°C
°C
V
V
V
V
V