CHA3023-99F UMS [United Monolithic Semiconductors], CHA3023-99F Datasheet
CHA3023-99F
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CHA3023-99F Summary of contents
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... GHz WIDE BAND AMPLIFIER GaAs Monolithic Microwave IC Description The CHA3023 is a travelling wave amplifier using cascode FET designed for a wide range of applications. The circuit is manufactured with a PHEMT process of 0.25µm gate length, via holes through the substrate and air bridges and it is available in die form ...
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... Top Operating temperature Tstg Storage temperature range (1) Operation of this device above anyone of these parameters may cause permanent damage (2) Duration < 1s DSCHA30235263 - 20 sep 05 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 1-18GHz Wide Band Amplifier Parameter Vd Vg1 ...
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... DSCHA30235263 - 20 sep 05 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 1-18 GHz Wide Band Amplifier MS12 PS12 MS21 dB ° dB -68,86 12,95 12,27 -59,00 -65,50 13,11 -57,76 -85,24 13,74 -55,88 -101,83 14,21 -56,09 -133,36 14,38 -54,51 -146,60 14,42 -53,45 -166,51 14,50 -52,07 178,88 14,55 -52,57 165,06 ...
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... CHA3023 Chip Typical Response (On wafer measurements) : Tamb = +25° 5.0V ; Vg2 = 2V and Vg1 tuned 95mA Typical on wafer Noise Figure DSCHA30235263 - 20 sep 05 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 1-18GHz Wide Band Amplifier Typical on wafer S parameters ...
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... CHA3023 Chip Typical Response (Test Jig measurements) : Tamb = +25° 5.0V ; Vg2 = 2V and Vg1 tuned 95mA DSCHA30235263 - 20 sep 05 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 1-18 GHz Wide Band Amplifier Power compression @ 1GHz Power compression @ 12GHz ...
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... CHA3023 DSCHA30235263 - 20 sep 05 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 1-18GHz Wide Band Amplifier P1dB vs Frequency Noise Figure vs Frequency Gain & Return Loss vs Frequency 6/8 Specifications subject to change without notice ...
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... Equivalent wire bo nding : 0.15 nH The CHA3023 could be used without Vg2 bias. There is a resistor bridge inside the chip. This one generates the correct value of Vg2 Bias. Pads G2a and G2 must be connected. Equivalent RF Wire Bondings: 0.15 nH (typical length of 200µm for a 25µm diameter wire). ...
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... Bonding pad positions Ordering Information Die form : CHA3023-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S ...