CHA5295 UMS [United Monolithic Semiconductors], CHA5295 Datasheet

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CHA5295

Manufacturer Part Number
CHA5295
Description
24.5-26.5GHz High Power Amplifier
Manufacturer
UMS [United Monolithic Semiconductors]
Datasheet

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Part Number
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Part Number:
CHA5295
Manufacturer:
UMS
Quantity:
1 400
Description
The CHA5295 is
monolithic high power amplifier. It is designed for
a wide range of applications, from military to
commercial
backside of the chip is both RF and DC grounds.
This helps simplify the assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam gate
lithography.
It is available in chip form.
Main Features
■ Performances : 24.5-26.5GHz
■ 30dBm output power @ 1dB comp.
■ 17 dB
■ DC power consumption, 800mA @ 6V
■ Chip size :
Main Characteristics
Tamb. = 25°C
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Symbol
Ref. : DSCHA529522297 -24-Oct.-02
P1dB
Fop
Id
G
1dB gain
4.01 x 2.52 x 0.05 mm
communication
24.5-26.5GHz High Power Amplifier
Output power at 1dB gain compression
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
a high gain three-stage
Operating frequency range
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
GaAs Monolithic Microwave IC
United Monolithic Semiconductors S.A.S.
Small signal gain
Parameter
Bias current
systems. The
1/8
32
30
28
26
24
22
20
18
16
14
12
10
24
Vg1 Vg2 Vd2
Vd1 Vd2
Specifications subject to change without notice
24,5
P-1dB (dBm)
Typical on jig Measurements
24.5
Min
16
29
25
Frequency (GHz)
Typ
800
17
30
Linear Gain (dB)
Vg3 Vd3
25,5
Vg3 Vd3
Max
26.5
CHA5295
PAE (%)
Unit
GHz
dBm
mA
dB
26
26,5

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CHA5295 Summary of contents

Page 1

... Small signal gain P1dB Output power at 1dB gain compression Id Bias current ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA529522297 -24-Oct.-02 United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0 Fax : +33 (0 Vd1 Vd2 systems. The ...

Page 2

... Operating temperature range Tstg Storage temperature range (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA529522297 -24-Oct.-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 24.5-26.5GHz High Power Amplifier Parameter ...

Page 3

... P-1dB (dBm 24,5 Linear Gain, Output power & PAE @ 1dB compression Ref. : DSCHA529522297 -24-Oct.-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 S11 S22 26 28 Frequency (GHz) Linear Gain (dB) 25 25,5 Frequency (GHz) 3/8 ...

Page 4

... C/I3 (dBc C/I3 & IP3 versus DCL output power @ 24.5GHz, 800mA Ref. : DSCHA529522297 -24-Oct.-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 24.5-26.5GHz High Power Amplifier 25,5GHz 26,5GHz 20 ...

Page 5

... C/I3 versus drain current & temperature @ 25.5GHz Ref. : DSCHA529522297 -24-Oct.-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 IP3 (dBm Output Power(dBm SCL Output Power (dBm) ...

Page 6

... Output power versus temperature & Drain current @ 25.5GHz Ref. : DSCHA529522297 -24-Oct.-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 24.5-26.5GHz High Power Amplifier -40°C - 600mA +85°C - 600mA -40°C - 800mA +85°C - 800mA 24 25 ...

Page 7

... To Vd1,Vd2 DC Drain supply feed Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire prefered. ( Chip thickness : 50µm. All dimensions are in micrometers ) Ref. : DSCHA529522297 -24-Oct.-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Vd3 DC Drain supply feed To Vg1,2,3 DC Gate supply feed Bonding pad positions ...

Page 8

... United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA529522297 -24-Oct.-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 ...

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